Invited Talks

2017

34  Joe Margetis, John Tolle, Sattar Al-Kabi, Yiyin Zhou, Huong Tran, Thach Pham, Wei Dou, Perry Grant, Shui-Qing Yu, Wei Du, Seyed Ghetmiri, Mansour Mortazavi, Greg Sun, Richard Soref, Baohua Li, GeSn-based Light Sources and Photoconductors towards Integrated Photonics for the Mid-Infrared, 2017 Summer Topicals Meeting Series (10 – 12 July 2017), San Juan, Puerto Rico

33  Jiaju Ma, Yang Zhang, Xiaoxin Wang, Lei Ying, Saleh Masoodian, Zhiyuan Wang, Dakota A. Starkey, Wei Deng, Rahul Kumar, Yang Wu, Seyed Amir Ghetmiri, Zongfu Yu, Shui-Qing Yu, Gregory J. Salamo, Eric R. Fossum, Jifeng Liu, Prospects and fundamental limitations of room temperature, non-avalanche, semiconductor photon-counting sensors, Proc. SPIE 10212, Advanced Photon Counting Techniques XI, 1021209 (9 June 2017)

32  Shui-Qing Yu, Wei Du, Seyed A. Ghetmiri, Aboozar Mosleh, Thach Pham, Yiyin Zhou, Greg Sun, Richard A. Soref, Joe Margetis, John Tolle, Baohua Li, Mansour Mortazavi, and Hameed A. Naseem, Silicon-based GeSn Photodetector and Light Emitter towards Mid-Infrared Applications, No. 10108-38, Jan 30-Feb 1, 2017, San Francisco, CA, USA.

 

2016

31  Shui-Qing Yu, SiGeSn Based Materials and Devices for Si-Photonics Applications, Invited Seminar Given at Air Force Research Lab (Wight Patterson, Ohio), 8/22/2016

30  Joe Margetis, Aboozar Mosleh, Seyed Amir Ghetmiri, Nupur Bhargava, Shui-Qing Yu, and John Tolle, Ge1-xSnx and SiyGe1-x-ySnx epitaxy on a commercial CVD reactor, 7th International Symposium on Control of Semiconductor Interfaces & International SiGe Technology and Device Meeting, Nagoya, Japan, June 7-11 (2016).

29  Joe Margetis, John Tolle, Wei Du, Aboozar Mosleh, Sayed A. Ghetmiri, Hameed Naseem, and Shui-Qing Yu, Ge1-xSnx and SiyGe1-x-ySnx epitaxy on a commercial CVD reactor,  IEEE Summer Topicals Meetings, Newport Beach, CA, USA, July 11-13 (2016).

28  W. Du, S. Al-Kabi, S. Ghetmiri, H. Tran, T. Pham, B. Alharthi, A. Mosleh, J. Margetis, J. Tolle, H. Naseem, M. Mortazavi, G. Sun, R. Soref, B. Li, and S. -Q. Yu, Development of SiGeSn Technique towards Mid-Infrared Devices in Silicon Photonics, Electrochemical Society Falling Meeting, Honolulu, HI, USA, October 02-07 (2016).

 

2015

27  Shui-Qing Yu, SiGeSn for Mid-IR Integrated PhotonicsSiGeSn for Mid-IR Integrated Photonics, An invited seminar given in School of Electrical, Computer and Energy Engineering at Arizona State University, November 2015.

26  Shui-Qing Yu, SiGeSn Based Materials and Devices for Si-Photonics Applications, NASA EPSCoR/OAI Power and Energy Forum, NASA Glenn Center, Cleveland, Ohio (July 22-24, 2015)

25 Shui-Qing Yu, SiGeSn Based Materials and Devices for Si-Photonics Applications, 2015 IEEE Summer Topical, July 13-15, Nassau, Bahamas (2015).

24  Shui-Qing Yu, Recent Progress of SiGeSn Material and Device development, What Can We Learn from III-V-Bismide Research? 6th International Workshop on Bismuth-Containing Semiconductors (6th BCS), Madison, Wisconsin, USA (July 20th, 2015).

23  Shui-Qing Yu, SiGeSn Based Materials and Devices for Si-Photonics Applications, An invited seminar given in Department of Electrical and Computer Engineering at University of Delaware, May 2015.

22  Shui-Qing Yu, and Wei Du, Si based mid-infrared GeSn photo detectors and light emitters on silicon substrates, in 2015 SPIE Optical Sensing, Imaging and Photon Counting—Nanostructured Devices and Applications, August 9-13, 2015, San Diego, CA, USA.

21  Shui-Qing Yu, Wei Du, Benjamin R. Conley, Seyed A. Ghetmiri, Aboozar Mosleh, Thach Pham, Yiyin Zhou, Amjad Nazzal, Greg Sun, Richard A. Soref, Joe Margetis, John Tolle, and Hameed A. Naseem, GeSn Photodetector and Light Emitter:  Mid-Infrared Devices in Silicon Photonics, SPIE Photonic West, San Francisco (2015).

 

2014

20 Shui-Qing Yu, High Performance III-V-Bismide Mid-Infrared Semiconductor Lasers, NSF Workshop for CAREER Awardees in Photonics, Conference on Lasers and Electro-Optics (CLEO 2014).

 

2013

19 V.G. Dorogan, Yu.I. Mazur, M. Schmidbauer, G. G. Tarasov, M. Benamara, S.-Q. Yu, S.R. Johnson, X. Lu, T. Tiedje, G.J. Salamo, Photoluminescence study of GaAsBi quantum wells: Effects of excitation intensity, temperature and spatial confinement, 4th International Workshop on Bismuth-Containing Semiconductors (4th BCS), Fayetteville, AR, USA, July14-17, 2013

18 S.-Q. Yu, An Introduction of Current Semiconductor Optoelectronics Research in University of Arkansas: From Novel Materials to Advanced Devices, In 2013 AAEE Annual Meeting, Fayetteville

 

2011

17 S.-Q. Yu, Novel GaInAsSbBi Materials for Mid-Infrared Type-I Quantum Well Lasers, in International workshop on 6.1 Å II-VI and III-V materials and their integration, Phoenix, 2011

 

2010

16 S.-Q. Yu, H. Naseem, Zh. M. Wang, S. R. Johnson, G. J. Salamo, Novel narrow bandgap compound semiconductors for photovoltaic and thermo-electric applications, In Army Research Labs “Advanced Concepts in Semiconductor Materials and Devices for Energy Conversion” workshop, Beltsville, MD, Dec 2010

15 S.-N. Wu, S.-Q. Yu, S. R. Johnson, D. Ding, Y.-H. Zhang, Practical devices for semiconductor luminescent refrigeration, SPIE Photonics West 2010

 

2008

14 S. R. Johnson, D. Ding, J.-B. Wang, S.-Q. Yu, Y.-H. Zhang, Measurement and Improvement of Quantum Efficiency in III-V Semiconductors, 50th TMS Electronic Materials Conference, EMC 2008, Santa Barbara CA, June 2008.

13 S.-Q. Yu, Light Emitting Diodes and Solar Cells with Ultra-High Energy-Conversion Efficiency, Seminar in University of Arkansas, March, 2008.

12 S.-Q. Yu, Light Emitting Diodes and Solar Cells with Ultra-High Energy-Conversion Efficiency, Seminar in University of New Mexico CHTM, February, 2008.

11 Y.-H. Zhang, S.-Q. Yu, D. Ding, S. R. Johnson, H.-X. Liu, S.-N. Wu, Electroluminescence Refrigeration in Semiconductor Light-Emitting Devices, SPIE Photonics West, San Jose CA, January 2008.

 

2007

10 S. R. Johnson, D. Ding, J.-B. Wang, S.-Q. Yu, Y.-H. Zhang, A fundamental technique for the measurement of quantum efficiency in direct bandgap semiconductors, SPIE Photonics Asia Beijing, P. R. China, November 2007.

9 S. R. Johnson, D. Ding, S.-Q. Yu, Y.-H. Zhang, Theoretical limits of light extraction and its impact on LED wall-plug efficiency, SPIE Photonics Asia, Beijing, P. R. China, November 2007.

8 Y.-H. Zhang, S.-Q. Yu, J.-B. Wang, D. Ding, S. Johnson, Is a light emitting diode ever possible to become a cooler? , ICMAT 2007, Singapore, July 2007.

7 Y.-H. Zhang, S.-Q. Yu, D. Ding, J.-B. Wang, S. R. Johnson, N. A. Rider, Semiconductor Electroluminescence Refrigeration, SPIE Photonics West, San Jose CA, January 2007.

 

2006

6 Y.-H. Zhang, J.-B. Wang, D. Ding, S.-Q. Yu, S. R. Johnson, Theoretical Limits of Electro-luminescence Refrigeration in Semiconductors, SPIE Photonics West, San Jose CA, January 2006.

 

2005 and earlier

5 S. R. Johnson, P. Dowd, S. A. Chaparro, S. A. Feld, M. Adamcyk, N. Samal, X. Jin, M. P. Horning, J.-B. Wang, S.-Q. Yu, D. Ding, Y. Cao, Yu. G. Sadofyev, Y.-H. Zhang, 1.3 µm GaAsSb/GaAs VCSELs, 21st North American Conference on Molecular Beam Epitaxy, Keystone CO, September 2003.

4 M. Adamcyk, S. Chaparro, P. Dowd, S. Feld, K. Hilgers, S. R. Johnson, J. Joseph, B. Liang, K. Shiralagi, S.-Q. Yu, Y.-H. Zhang, 1.3 µm GaAsSb/GaAs VCSELs for Telecommunications Applications, SPIE Photonics West, San Jose CA, January 2003.

3 Y.-H. Zhang, S. R. Johnson, C.-Z. Guo, N. Samal, J.-B. Wang, S.-Q. Yu, Y. Cao, D. Ding, S. Chaparro, Y. Sadofyev, X. Jin, C. Navarro, D. Smith, “Room temperature CW operation of 1.3 µm strain-compensated GaAsP/GaAs/GaAsSb MQW VCSELs grown on GaAs”, APOC, Shanghai, Oct., 2002.

2 Y.-H. Zhang, S. R. Johnson, C.-Z. Guo, N. Samal, J.-B. Wang, S.-Q. Yu, Y. Cao, D. Ding, S. Chaparro, Y. Sadofyev, X. Jin, “GaAsSb/GaAs long wavelength VCSELs grown by MBE”, The 14th American Conference on Crystal Growth and Epitaxy (ACCGE-14), Seattle, Aug. 4-9, 2002.

1 S. R. Johnson, C.-Z. Guo, S. A. Chaparro, Yu. G. Sadofyev, J.-B. Wang, Y. Cao, N. Samal, C. Navarro, J. Xu, P. Dowd, S.-Q. Yu, D. Ding, Y.-H. Zhang, CW Room Temperature Operation of Long-Wavelength GaAsSb VCSELs on GaAs, Long-Wave on GaAs Technology Workshop, Napa Valley CA, June 2002.