Journal Papers

Google Scholar Link

2018

95  S.V. Kondratenko, Yu. V. Hyrka, Yu. I. Mazur, A.V. Kuchuk, Wei Dou, Huong Tran, Joe Margetis, John Tolle, Wei Du, Shui-Qing Yu, and G. J. Salamo, Photovoltage spectroscopy of direct and indirect bandgaps of strained Ge1-xSnx thin films on Ge/Si(001) substrate, In preparation, To be submitted to Journal of Applied Physics.

94  Perry C. Grant, Wei Dou, Bader Alharthi, Joshua M. Grant, Huong Tran, Grey Abernathy, Aboozar Mosleh, Wei Du, Baohua Li, Mansour Mortazavi, Hameed A. Naseem, Shui-Qing Yu, UHV-CVD Growth of High Quality GeSn Using SnCl4: From Growth Optimization to Prototype Devices, In preparation, To be submitted to Journal of Applied Physics, Special Topic: Highly Mismatched Semiconductors Alloys: from Atoms to Devices.

93  Wei Du, Shui-Qing Yu, Group-IV photonics using (Si)GeSn technology towards mid-IR applications, Book chapter for “Mid-IR Optoelectronics: Materials, Devices, Applications”, Published by ELSEVIER Woodhead collection (2018), Edited by Eric TOURNIE and Laurent Cerutti, Under Review. 

92  Joe Margetis, Shui-Qing Yu, Baohua Li, and John Tolle, The Chemistry and Kinetics Governing Hydride/Chloride CVD Growth of Epitaxial Ge1-xSnx, Submitted to Applied Surface Science, Under Review.

91  Joe Margetis, Yiyin Zhou, Wei Dou, Perry C. Grant, Wei Du, Bader Alharthi, Huong Tran, Solomon Ojo, Grey Abernathy, Seyed A. Ghetmiri, Jifeng Liu, Greg Sun, Richard Soref, John Tolle, Baohua Li, Mansour Mortazavi, Shui-Qing Yu, All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K, Submitted to Applied Physics Letters, Under Review.

90  T. D. Eales, I. P. Marko, S. Schulz, E. O’Halloran, S. A. Ghetmiri, W. Du, Y. Zhou, S. Yu, J. Margetis, J. Tolle, E. P. O’Reilly, and S. J. Sweeney, GeSn Alloys: Rethinking the Nature of Semiconductor Band Structure, Submitted to Nature Communications, Under Review.

89  Abbas Sabbar, Syam Madhusoodhanan, Sattar Al-Kabi, Binzhong Dong, Jiangbo Wang, Stanley Atcitty, Robert Kaplar, Ding Ding, Alan Mantooth, Shui-Qing Yu, and Zhong Chen, Systematic Investigation of Spontaneous Emission Quantum Efficiency Drop up to 800K for Future Power Electronics Applications, Submitted to IEEE Journal of Emerging and Selected Topics in Power Electronics, under review.

88 Wei Dou, Bader Alharthi, Perry C. Grant, Joshua M. Grant, Aboozar Mosleh, Huong Tran, Wei Du, Mansour Mortazavi, Baohua Li, Hameed Naseem, and Shui-Qing Yu, “Crystalline GeSn growth by plasma enhanced chemical vapor deposition,” Opt. Mater. Express 8, 3220-3229 (2018). Selected as the editor’s pick.

87 Perry C Grant, Joe Margetis, Wei Du, Yiyin Zhou, Wei Dou, Grey Abernathy, Andrian Kuchuk, Baohua Li, John Tolle, Jifeng Liu, Greg Sun, Richard A Soref, Mansour Mortazavi and Shui-Qing Yu, “Study of direct bandgap type-I GeSn/GeSn double quantum well with improved carrier confinement” Nanotechnology 29, 4652 (2018)

86 Wei Dou, Yiyin Zhou, Joe Margetis, Seyed Amir Ghetmiri, Sattar Al-Kabi, Wei Du, Jifeng Liu, Greg Sun, Richard A. Soref, John Tolle, Baohua Li, Mansour Mortazavi, and Shui-Qing Yu, “Optically pumped lasing at 3  μm from compositionally graded GeSn with tin up to 22.3%,” Opt. Lett. 43, 4558-4561 (2018)

85 Perry C. Grant, Joe Margetis, Yiyin Zhou, Wei Dou, Grey Abernathy, Wei Du, Baohua Li, John Tolle, Jifeng Liu, Greg Sun, Richard A. Soref, Mansour Mortazavi, Shui-Qing Yu, Direct Bandgap Type-I GeSn/GeSn Quantum Well on Si substrate, AIP Advances 8, 025104 (2018), Selected as the editor’s pick.

84 Huong Tran, Thach Pham, Wei Du, Yang Zhang, Perry C. Grant, Josh M. Grant, Greg sun, Richard A. Soref, Joe Margetis, John Tolle, Baohua Li, Mansour Mortazavi, and Shui-Qing Yu, High performance Ge0.89Sn0.11 photodiode for low-cost shortwave infrared imaging, Journal of Applied Physics 124, 013101 (2018); doi: 10.1063/1.5020510.

83 Yang Zhang, Yang Wu, Xiaoxin Wang, Lei Ying, Rahul Kumar, Zongfu Yu, Eric R. Fossum, Jifeng Liu, Gregory Salamo, and Shui-Qing Yu, Detecting Single Photons Using Capacitive Coupling of Single Quantum Dots with Sub-Picosecond Intrinsic Timing Jitter, ACS Photonics 5 (5), 2008-2021.

82 Eesha Andharia, Thaneshwor P. Kaloni, Gregory J. Salamo, Shui-Qing Yu, Hugh O. H. Churchill, and Salvador Barraza-Lopez, Exfoliation energy, quasiparticle band structure, and excitonic properties of selenium and tellurium atomic chains, PHYSICAL REVIEW B 98, 035420 (2018).

81 Bader Alharthi, Joshua M. Grant, Wei Dou, Perry C. Grant, Aboozar Mosleh, Wei Du, Mansour Mortazavi, Baohua Li, Hameed Naseem, and Shui-Qing Yu, Heteroepitaxial Germanium-on-Silicon Using RF Plasma Enhancement for Ultra-High Vacuum Chemical Vapor Deposition, Journal of Electronic Materials (2018), doi.org/10.1007/s11664-018-6315-5.

80 Hakimah Alahmad, Aboozar Mosleh, Murtadha Alher, Seyedeh Fahimeh Banihashemian, Seyed Amir Ghetmiri, Sattar Al-Kabi, Wei Du, Baohua Li, Shui-Qing Yu, Hameed A. Naseem, Growth and characterization of GePb Alloy using layer inversion method, Journal of Electronic Materials 47 (7), 3733-3740.

79 Wei Dou, Mourad Benamara, Aboozar Mosleh, Joe Margetis, Perry Grant, Yiyin Zhou, Sattar Al-Kabi, Wei Du, John Tolle, Baohua Li, Mansour Mortazavi, Shui-Qing Yu, Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth, Scientific Reports (Nature Publisher Group) vol. 8, pp. 1-11, 2018.

78 Joe Margetis, Sattar Al-Kabi, Wei Du, Wei Dou, Yiyin Zhou, Thach Pham, Perry Grant, Seyed Ghetmiri, Aboozar Mosleh, Baohua Li, Jifeng Liu, Greg Sun, Richard Soref, John Tolle, Mansour Mortazavi, Shui-Qing Yu, Si-based GeSn lasers with wavelength coverage of 2 to 3 μm and operating temperatures up to 180 K, ACS Photonics, ACS Photonics, 2018, 5 (3), pp 827–833, DOI: 10.1021/acsphotonics.7b00938, arXiv:1708.05927. This work was highlighted by the following media (see the link in below).
https://phys.org/news/2018-02-pptically-laser-closer-sensors.html
http://www.physnews.com/nano-physics-news/cluster1768865394/
http://www.newswise.com/articles/view/689280/?sc=rssn
https://www.azooptics.com/News.aspx?newsID=23701

2017

77 Perry C. Grant, Wei Dou, Bader Alharthi, Joshua M. Grant, Aboozar Mosleh, Wei Du, Baohua Li, Mansour Mortazavi, Hameed A. Naseem, and Shui-Qing Yu, Comparison study of the low temperature growth of dilute GeSn and Ge, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 35, 061204 (2017); doi: 10.1116/1.4990773.

76 Joe Margetis, Nupur Bhargava, Wei Du, Shui-Qing Yu, Baohua Li, and John Tolle, Strain Engineering in Epitaxial GexSn1-x: a Path to Low-defect high Sn-content Layers, Semiconductor Science and Technology, In press. https://doi.org/10.1088/1361-6641/aa7fc7

75 Yang Zhang, Yang Wu, Xiaoxin Wang, Eric R. Fossum, Rahul Kumar, Jifeng Liu, Gregory Salamo, and Shui-Qing Yu, Non-avalanche single photon detection without carrier transit-time delay through quantum capacitive coupling, Optics Express Vol. 25, Issue 22, pp. 26508-26518 (2017)
74 Bader Alharthi, Joe Margetis, Huong Tran, Sattar Al-kabi, Wei Dou, Seyed Amir Ghetmiri, Aboozar Mosleh, John Tolle, Wei Du, Mansour Mortazavi, Baohua Li, Hameed Naseem, and Shui-Qing Yu, Study of material and optical properties of SixGe1-x-ySny alloys for Si-based optoelectronic device applications, Optical Materials Express, Vol. 7, Issue 10, pp. 3517-3528 (2017).

73 Hugh O. H. Churchill, Gregory J. Salamo, Shui-Qing Yu, Takayuki Hironaka, Xian Hu, Jeb Stacy, Ishiang Shih, Toward Single Atom Chains with Exfoliated Tellurium, Nanoscale Research Letters (2017) 12:488, DOI 10.1186/s11671-017-2255-x.

72 Wei Du, Seyed Amir Ghetmiri, Joe Margetis, Sattar Al-Kabi, Yiyin Zhou, Jifeng Liu, Greg Sun, Richard A. Soref, John Tolle, Baohua Li, Mansour Mortazavi, and Shui-Qing Yu, Investigation of optical transitions in a SiGeSn/GeSn/SiGeSn single quantum well structure, Journal of Applied Physics 122, 123102 (2017); doi: 10.1063/1.4986341.

71 Yu. I. Mazur, Sergei Kurlov, Gregory Salamo, Martin Schmidbauer, Shui-Qing Yu, Gilmar Marques, Leonardo Dias, Vitally Dorogan, Dongsheng Fan, Zoriana Zhuchenko, georgiy tarasov, Morgan Ware, Luminescent properties of GaAsBi /GaAs double quantum well structures, Journal of Luminescence, 188 (2017) 209–216.

70 J. Margetis, A. Mosleh, S. Al-Kabi, S. Ghetmiri, W. Du, W. Dou, M. Benamara, B. Li, M. Mortazavi, H. Naseem, S.-Q. Yu and J. Tolle, Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD for mid-infrared applications, Journal of Crystal Growth, 463 (2017) 128–133.

69 Seyed A. Ghetmiri, Yiyin Zhou, Joe Margetis, Sattar Al-Kabi, Wei Dou, Aboozar Mosleh, Wei Du, Andrian Kuchuk, Jifeng Liu, Greg Sun, Richard A. Soref, John Tolle, Hameed A. Naseem, Baohua LI, Mansour Mortazavi, and Shui-Qing Yu, Study of SiGeSn/GeSn/SiGeSn structure towards direct bandgap type-I quantum well for all group-IV-optoelectronics, Optics Letters, Vol. 42, No. 3 (2017), pp 387- 390.

2016

68 Joe Margetis, Aboozar Mosleh, Seyed Amir Ghetmiri, Nupur Bhargava, Shui-Qing Yu, Harald Profijt, David Kohen, Roger Loo, Anurag Vohra, and John Tolle, Fundamentals of Ge1-xSnx and SiyGe1-x-ySnx RPCVD Epitaxy, Materials Science in Semiconductor Processing (2016), http://dx.doi.org/10.1016/j.mssp.2016.12.024.

67 Sattar Al-Kabi, Seyed Ghetmiri, Joe Margetis, Thach Pham, Yiyin Zhou, Bria Collier, Randy Quinde, Wei Du, Aboozar Mosleh, Jifeng Liu, Greg Sun, Richard Soref, John Tolle, Baohua Li, Mansour Mortazavi, Hameed Naseem, and Shui-Qing Yu, An optically pumped 2.5 µm GeSn laser on Si operating at 110 K, Applied Physics Letters 109, 171105 (2016); doi: 10.1063/1.4966141. This work was highlighted by the following media (see the link in below).
https://www.sciencedaily.com/releases/2017/02/170207110239.htm
http://esciencenews.com/sources/newswise.scinews/2017/02/07/germanium.tin.laser.could.increase.processing.speed.computer.chips
http://www.hitechdays.com/news/166494/germanium-tin-laser-could-increase-processing-speed-of-computer-chips/
http://www.novuslight.com/silicon-photonics-germanium-tin-laser-promises-faster-chips_N6609.html

66 Sattar Al-Kabi, Seyed Ghetmiri, Joe Margetis, Wei Du, Aboozar Mosleh, Wei Dou, Greg Sun, Richard Soref, John Tolle, Baohua Li, Mansour Mortazavi, Hameed Naseem, Shui-Qing Yu, Study of High Quality GeSn Alloys Grown by Chemical Vapor Deposition towards Mid-Infrared Applications, Journal of Electronic Materials (2016), 10.1007/s11664-016-5028-x.

65 Wei Dou, Seyed Ghetmiri, Sattar Al-Kabi, Aboozar Mosleh, Yiyin Zhou, Bader Alharthi, Wei Du, Joe Margetis, John Tolle, Andrian Kuchuk, Mourad Benamara, Baohua Li, Hameed Naseem, Mansour Mortazavi, and Shui-Qing Yu, Structural and Optical Characteristics of GeSn Quantum Wells for Silicon-Based Mid-Infrared Optoelectronic Applications, Journal of Electronic Materials (2016), 10.1007/s11664-016-5031-2.

64 W. Du, S. Al-Kabi, S. Ghetmiri, H. Tran, T. Pham, B. Alharthi, A. Mosleh, J. Margetis, J. Tolle, H. Naseem, M. Mortazavi, G. Sun, R. Soref, B. Li, and S. -Q. Yu, Development of SiGeSn Technique towards Mid-Infrared Devices in Silicon Photonics, ECS Transactions, 75 (8) 231-239 (2016).

63 Yiyin Zhou, Wei Dou, Wei Du, Thach Pham, Seyed Amir Ghetmiri, Sattar Al-Kabi, Aboozar Mosleh, Joe Margetis, John Tolle, Greg Sun, Richard Soref, Baohua Li, Mansour Mortazavi, Hameed Naseem, and Shui-Qing Yu, Systematic study of Si-based GeSn light-emitting diodes towards mid-infrared applications, Journal of Applied Physics 120, 023102 (2016)

62 J. A. Steele, R. A. Lewis, J. Horvat, M. J. B. Nancarrow, M. Henini, D. Fan, Y. I. Mazur, M. E. Ware, S.-Q. Yu, and G. J. Salamo, Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi, Scientific Reports,6:28860 (2016)

61 A. Mosleh, M. Alher, L. C. Cousar, W. Du, S. A. Ghetmiri, S. Al-Kabi, W. Dou, P. C. Grant, G. Sun, R. A. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, Buffer-free GeSn and SiGeSn growth on Si substrate using in-situ SnD4 gas mixing, J. Electron. Mater., April 2016, Volume 45, Issue 4, pp 2051-2058.

60 T. Pham, W. Du, H. Tran, J. Margetis, J. Tolle, G. Sun, R. A. Soref, H. A. Naseem, B. Li, and S.-Q. Yu, Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection, Opt. Express, Vol. 24, Issue 5, pp. 4519-4531 (2016), doi: 10.1364/OE.24.004519.

59 Huong Tran, Wei Du, Seyed A. Ghetmiri, Aboozar Mosleh, Greg Sun, Richard A. Soref, Joe Margetis, John Tolle, Baohua Li, Hameed A. Naseem, and Shui-Qing Yu, Systematic Study of Ge1-xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics, Journal of Applied Physics 119, 103106 (2016); doi: 10.1063/1.4943652

58 R. Soref, D. Buca and S.-Q. Yu, Group IV Photonics: Driving Integrated Optoelectronics, Invited Article, Opt. Photonics News, Vol. 27, Issue 1, pp. 32-39 (2016). doi: 10.1364/OPN.27.1.000032

57 A. Mosleh, M. Alher, W. Du, L. C. Cousar, S. A. Ghetmiri, S. Al-Kabi, W. Dou, P. C. Grant, G. Sun, R. A. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system, J. Vac. Sci. Technol. B, 34, 011201 (2016). Selected as the editor’s pick and the most read paper in the month.

2015

56 J. A. Steele, J. Horvat, R. A. Lewis, M. Henini, D. Fan, Yu. I. Mazur, V. G. Dorogan, P. C. Grant, S.-Q. Yu and G. J. Salamo, Mechanism of periodic height variations along selfaligned VLS-grown planar nanostructures, Nanoscale, 2015, 7, 20442-20450, DOI: 10.1039/C5NR06676J.

55 A. Mosleh, M. Alher, L. Cousar, H. Abu-safe, W. Dou, P. C. Grant, S. Al- Kabi, S. A. Ghetmiri, B. Alharthi, H. Tran, W. Du, M. Benamara, B. Li, M. Mortazavi, S.-Q. Yu, and H. Naseem, Enhancement of Material Quality of (Si)GeSn Films Grown By SnCl4 Precursor, ECS Transactions, 69 (5) 279-286 (2015).

54 M. Alher, A. Mosleh, L. Cousar, W. Dou, P. C. Grant, S. A. Ghetmiri, S. Al-Kabi, W. Du, M. Benamara, B. Li, M. Mortazavi, S.-Q. Yu, and H. A. Naseem, CMOS Compatible Growth of High Quality Ge, SiGe and SiGeSn for Photonic Device Applications, ECS Transactions, 69 (5) 269-278 (2015).

53 S. Al-Kabi, S. A. Ghetmiri, J. Margetis, W. Du, A.r Mosleh, M. Alher, W. Dou, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, Optical characterization of Si-based Ge1-xSnx alloys with Sn compositions up to 12%, J. Electron. Mater., 1-9, DOI: 10.1007/s11664-015-4283-6 (2015). Selected as editor’s pick.

52 T. N. Pham, W. Du, B. R. Conley, J. Margetis, G. Sun, R. A. Soref, J. Tolle, B. Li and S. -Q. Yu, Si based Ge0.9Sn0.1 photo detector with a peak responsivity of 2.85 A/W and a longwave cutoff at 2.4 μm, Electronics Letters, 51, 854 (2015).

51 Aboozar Mosleh, Murtadha Alher, Larry C. Cousar, Wei Du, Seyed Amir Ghetmiri, Tach Pham, Benjamin R. Conley, Joshua M. Grant, Greg Sun, Richard A. Soref, Baohua Li, Hameed. A. Naseem, and Shui-Qing Yu, Direct growth of Ge1-xSnx films on Si using a cold-wall ultra-high-vacuum chemical-vapor-deposition system, Frontiers in Materials, vol. 2, pp. 30 (2015). Highlighted by the editor.

2014

50 Benjamin R. Conley, Joe Margetis, Wei Du, Huong Tran, Aboozar Mosleh, Seyed Amir Ghetmiri, John Tolle, Greg Sun, Richard Soref, Baohua Li, Hameed A. Naseem, and Shui-Qing Yu, Si based GeSn photoconductors with a 1.63A/W peak responsivity and a 2.4μm longwavelength cutoff, Applied Physics Letters, 105, 221117 (2014).

49 Joe Margetis, Seyed Amir Ghetmiri, Wei Du, Benjamin R. Conley, Aboozar Mosleh, Richard A. Soref, Greg Sun, Lucas Domulevicz, Hameed A. Naseem, Shui-Qing Yu, and John Tolle, Growth and characterization of Ge1-xSnx alloys deposited using a commercial CVD system, ECS Transactions, 64 (6) 711-720 (2014).

48 A. Mosleh, M. Benamara, S.A. Ghetmiri, B. Conley, W. Du, J. Tolle, S.-Q. Yu, H. Naseem, Investigation of defect formation and propagation in GeSn thin films, ECS Transactions, 64 (6) 895-901 (2014).
47 B. R. Conley, A. Mosleh, S. A. Ghetmiri, G. Sun, R. Soref, J. Tolle, H. A. Naseem, S.-Q. Yu, Stability of Pseudomorphic and Compressively Strained Ge1-xSnx Thin Films under Rapid Thermal Annealing, ECS Transactions, 64 (6) 881-893 (2014).

46 Aboozar Mosleh, Hameed A. Naseem, Zafar Waqar, Shui-Qing Yu, Husam Abu-Safe, Seyed Amir Ghetmiri, Benjamin R. Conley, Mourad Benamara, Investigation of Growth Mechanism and Role of H2 in Very Low Temperature Si Epitaxy, ECS Transactions, 64 (6) 967-975 (2014).

45 Seyed Amir Ghetmiri, Wei Du, Joe Margetis, Aboozar Mosleh, Larry Cousar, Benjamin R. Conley, Lucas Domulevicz, Amjad Nazzal, Greg Sun, Richard A. Soref, John Tolle, Baohua Li, Hameed A. Naseem, and Shui-Qing Yu, Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence, Appl. Phys. Lett., Vol. 105, Issue 15, pp. 151109 (2014).

44 Seyed Amir Ghetmiri, Wei Du, Benjamin R. Conley, Aboozar Mosleh, Amjad Nazzal, Richard A. Soref, Greg Sun, Joe Margetis, John Tolle, Hameed A. Naseem, and Shui-Qing Yu, Near and mid-infrared photoluminescence from Ge1-xSnx thin films on Si substrates, JVST B, 32, 060601 (2014). This paper was selected as the Featured Letters by JVST B on 12/16/2014.

43 Wei Du, Seyed A. Ghetmiri, Benjamin R. Conley, Aboozar Mosleh, Amjad Nazzal, Richard A. Soref, Greg Sun, John Tolle, Joe Margetis, Hameed A. Naseem, and Shui-Qing Yu, Competition of optical transitions between direct and indirect bandgaps in Ge1-xSnx, Appl. Phys. Lett., vol. 105, pp. 051104 (2014), Highlighted for the latest research in thin film by AIP, http://aip-info.org/1XPS-2OZ9V-64C9M6MI78/cr.aspx

42 Wei Du, Yiyin Zhou, Seyed A. Ghetmiri, Aboozar Mosleh, Benjamin R. Conley, Amjad Nazzal, Richard A. Soref, Greg Sun, John Tolle, Joe Margetis, Hameed A. Naseem, and Shui-Qing Yu, Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge double heterostructure LEDs on Si substrates via CVD, Appl. Phys. Lett., vol. 104, pp. 241110 (2014)

41 Benjamin R. Conley, Aboozar Mosleh, Seyed Amir Ghetmiri, Wei Du, Richard A. Soref, Greg Sun, Joe Margetis, John Tolle, Hameed A. Naseem, and Shui-Qing Yu, Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection, Opt. Express Vol. 22, No. 13, pp. 15639-15652 (2014). This work was highlighted by the following media (see the link in below).
http://www.pddnet.com/news/2014/09/germanium-tin-cheaper-smartphones
http://phys.org/news/2014-09-germanium-tin-cheaper-infrared-cameras.html
http://www.azom.com/news.aspx?newsID=42434
http://www.newswise.com/articles/germanium-tin-could-mean-better-and-cheaper-infrared-cameras-in-smartphones
http://www.laserfocusworld.com/articles/2014/09/cmos-compatible-germanium-tin-on-silicon-could-make-inexpensive-ir-camera-sensor.html
http://www.opli.net/opli_magazine/eo/2014/germanium-tin-could-mean-better-and-cheaper-infrared-cameras-in-smartphones-sept-news/
http://www.sciencedaily.com/releases/2014/09/140918121338.htm

40 J. A. Steele, R. A. Lewis, M. Henini, O. M. Lemine, A. Alkaoud, D. Fan, Yu.I. Mazur, V. G. Dorogan, P. C. Grant, S.-Q. Yu, and G. J. Salamo, Raman reveals strong LO-phonon-hole-plasmon coupling in undoped GaAsBi, Optics Express , Vol. 22, No. 10, 11680-11689 (2014).
39 Yu. I. Mazur, M. D. Teodoro, L. Dias de Souza, M. E. Ware, D. Fan, S.-Q. Yu, G. G. Tarasov, G. E. Marques and G. J. Salamo, Low temperature magneto-photoluminescence of GaAsBi /GaAs quantum well heterostructures, Journal of Applied Physics 115, 123518 (2014).

41 P. C. Grant, D. Fan, A. Mosleh, V. G. Dorogan, M. E. Hawkridge, Y. I. Mazur, M. Benamara, S.-Q. Yu, G. J. Salamo, Rapid thermal annealing effect on GaAsBi/GaAs single quantum wells grown by molecular beam epitaxy, J. Vac. Sci. Technol. B, 32, 02C119 (2014)

38 Aboozar Mosleh, Seyed Amir Ghetmiri, Benjamin R. Conley, Michael Hawkridge, Mourad Benamara, John Tolle, Shui-Qing Yu, Hameed A. Naseem, Strain Engineering of High Quality CVD Grown Gesn Films for Optoelectronic Devices, Journal of Electronic Materials, DOI: 10.1007/s11664-014-3089-2 (2014)

37 Mohammad Ali Khorrami, Samir El-Ghazaly, Hameed Naseem, Shui-Qing Yu, Global Modeling of Active Terahertz Plasmonic Devices, IEEE Transactions on Terahertz Science and Technology, Vol. 4, No. 1, pp101-109, January (2014)

2013

36 Huajun Zhou, Huixu Deng, Seyed Ghetmiri, Husam Abu-Safe, Shui-Qing Yu, Xiaodong Yang, Z. Tian, Optimizing Height and Packing-Density of Oriented One-Dimensional Photocatalysts for Efficient Water-Photolysis, The Journal of Physical Chemistry C vol. 117 issue 40 October 10, 2013. p. 20778-20783

35 Yu. I. Mazur, V. G. Dorogan, L. D. de Souza, D. Fan, M. Benamara, M. Schmidbauer, M. E. Ware, G. G. Tarasov, S.-Q. Yu, G. E. Marques and G. J. Salamo, Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1-xBix /GaAs heterostructures, Nanotechnology 25 (2014) 035702 (9pp)

34 Asmaa Elkadi, Emmanuel Decrossas, Shui-Qing Yu, Hameed A. Naseem, and Samir M. El-Ghazaly, Aligned semiconducting single-walled carbon nanotubes: Semi-analytical solution, J. Appl. Phys. 114, 114306 (2013).

33 Zhaoquan Zeng, Timothy A. Morgan, Dongsheng Fan, Chen Li, Yusuke Hirono, Xian Hu, Yanfei Zhao, Joon Sue Lee, Jian Wang, Zhiming M. Wang, Shuiqing Yu, Michael E. Hawkridge, Mourad Benamara, and Gregory J. Salamo, Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction, AIP Advances 3, 072112 (2013)
This paper was highlighted in AIP and chosen as Editor’s picks. Further, it was reported by Science Daily and EurekAlert.
http://www.sciencedaily.com/releases/2013/10/131011135036.htm
http://www.eurekalert.org/pub_releases/2013-10/aiop-qcb101413.php

32 Greg Sun, Shui-Qing Yu, The SiGeSn Approach towards Si-based Lasers, Invited paper, Solid-State Electronics 83 (2013) 76–81
31 D. Fan, P. C. Grant, S.-Q. Yu, V. G. Dorogan, X. Hu, Z. Zeng, C. Li, M. E. Hawkridge, M. Benamara, Yu, I. Mazur, G. J. Salamo, S. R. Johnson, Zh. M. Wang, MBE Grown GaAsBi/GaAs Double Quantum Well Separate Confinement Heterostructures, J. Vac. Sci. Technol. B 31, 03C105 (2013)

30 N. Hossain, K. Hild, S. R. Jin, S.-Q. Yu, S. R. Johnson, D. Ding, and Y. H. Zhang, S. J. Sweeney, The influence of growth conditions on carrier recombination mechanisms in 1.3 µm GaAsSb/GaAs quantum well lasers, Appl. Phys. Lett. 102, 041106 (2013)

29 Yu. I. Mazur, V. G. Dorogan, M. Schmidbauer, G. G. Tarasov, S. R. Johnson, X. Lu, S.-Q. Yu, T. Tiedje, and G. J. Salamo, Strong excitation intensity dependence of the photoluminescence line shape in GaAs1-xBix single quantum well samples, J. Appl. Phys. 113, 144308 (2013)

28 Yu. I. Mazur, V. G. Dorogan, M. Benamara, M. E. Ware, M. Schmidbauer, G. G. Tarasov, S. R. Johnson, X. Lu, S.-Q. Yu, T. Tiedje, and G. J. Salamo, Effects of spatial confinement and layer disorder in photoluminescence of GaAs1-xBix /GaAs heterostructures, J. Phys. D: Appl. Phys. 46 (2013) 065306

2012

27 G. Blume, K. Hild, I.P. Marko, S.J. Sweeney, T.J.C. Hosea, S.-Q. Yu, S. R. Johnson and Y.-H Zhang, Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements, J. Appl. Phys. 112, 033108 (2012).

26 D. Fan, , Z. Zeng, X. Hu, V. G. Dorogan, C. Li, M. Benamara, M. E. Hawkridge, Yu, I. Mazur, S.-Q. Yu, S. R. Johnson, Zh. M. Wang, and G. J. Salamo, Molecular Beam Epitaxy Growth of GaAsBi/GaAs/AlGaAs Separate Confinement Heterostructures, Appl. Phys. Lett., vol. 101, pp. 181103 (2012).

25 Mohammad Ali Khorrami, Samir El-Ghazaly, Shui-Qing Yu, and Hameed Naseem, Terahertz plasmon amplification using two-dimensional electron-gas layers, J. Appl. Phys. 111, 094501 (2012)

24 Dongsheng Fan, Zhaoquan Zeng, Vitaliy G. Dorogan, Yusuke Hirono, Chen Li, Yuriy I. Mazur, Shui-Qing Yu, Shane R. Johnson, Zhiming M. Wang, Gregory J. Salamo, Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy, J Mater Sci: Mater Electron, DOI 10.1007/s10854-012-0987-z (2012).

2011

23 C. Li, Z. Q. Zeng, D. S. Fan, Y. Hirono, J. Wu, T. A. Morgan, S.-Q. Yu, Zh. M. Wang, G. J. Salamo, Bismuth Nano-droplets for Group-V Based Molecular-Beam Droplet Epitaxy, Appl. Phys. Lett., 99, 243113 (2011).

22 D. Ding, S. R. Johnson, S.-Q. Yu, S.-N. Wu, and Y.-H. Zhang, A Semi-Analytical Model for Semiconductor Solar Cells, J. Appl. Phys., 110, 123104 (2011).

21 K. Hild, I.P. Marko, S.J. Sweeney, S.R. Johnson, S.-Q. Yu and Y.-H. Zhang, Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3µm GaAsSb/GaAs Vertical Cavity Surface Emitting Lasers, Appl. Phys. Lett. 99, 071110 (2011).

20 Yu. I. Mazur, V. G. Dorogan, M. Schmidbauer, G. G. Tarasov, S. R. Johnson, X. Lu, S.-Q. Yu, Zh. M. Wang, T. Tiedje, and G. J. Salamo, Optical evidence of quantum well channel in low-temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructures, Nanotechnology 22, 375703 (2011).

19 S.-N. Wu, S.-Q. Yu, D. Ding, S. R. Johnson, and Y.-H. Zhang, Ultra High Luminescence Extraction via the Monolithic Integration of a Light Emitting Active Region with a Semiconductor Hemisphere, J. Vac. Sci. Technol. B 29, 031213 (2011).

2010

18 Zhenhua Li, Jiang Wu, Zhiming M. Wang, Dongsheng Fan, Aqiang Guo, Shibing Li, Shui-Qing Yu, Omar Manasreh, Gregory J. Salamo, InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications, Nanoscale Res Lett, DOI 10.1007/s11671-010-9605-2 (2010).

17 Song-Nan Wu, Ding Ding, Shane R. Johnson, Shui-Qing Yu, and Yong-Hang Zhang, Four-Junction Solar Cells Using Lattice-Matched II-VI and III-V Semiconductors, Prog. Photovolt: Res. Appl. 18:1–7 (2010).

2009

16 Jay Mathews, Radek Roucka, Junqi Xie, Shui-Qing Yu, José Menéndez, and John Kouvetakis, Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications, Appl. Phys. Lett., 95, 133506 (2009).

2008

15 Radek Roucka, Jay Mathews, Vijay D’Costa, Junqi Xie, John Tolle, Shui-Qing Yu, Jose Menendez, John Kouvetakis, Ge1-ySny photoconductor structures at 1.55µm: From advanced materials to prototype devices, J. Vac. Sci. Technol. B 26, 1952-1959 (2008).

14 S.-Q. Yu, Y. Cao, S. R. Johnson, Y.-H. Zhang, Y.-Z. Huang, GaSb based mid-infrared equilateral-triangle-resonator semiconductor lasers, J. Vac. Sci. Technol. B 26, 56-61 (2008).

2007

13 K. Hild, S. J. Sweeney, I. P. Marko, S. R. Jin, S. R. Johnson, S. A. Chaparro, S.-Q. Yu, and Y.-H. Zhang, Temperature and pressure dependence of carrier recombination processes in GaAsSb/GaAs quantum well, Phys. stat. sol. (b) 244, No. 1, 197-202 (2007).

12 S.-Q. Yu, D. Ding, J.-B. Wang, N. Samal, S. R. Johnson, Y.-H. Zhang, High performance GaAsSb/GaAs quantum well lasers, J. Vac. Sci. Technol. B 25, 1658-1663 (2007). (Selected for the September 24, 2007 issue of Virtual Journal of Nanoscale Science & Technology)
11 S.-Q. Yu, J.-B. Wang, S. R. Johnson, D. Ding, D. Vasileska, Y.-H. Zhang, Impact of electronic density of states on electroluminescence refrigeration, Solid-State Electronics 51, 1387-1390 (2007).

10 J.-B. Wang, D. Ding, S. R. Johnson, S.-Q. Yu, and Y.-H. Zhang, Determination and improvement of spontaneous emission quantum efficiency in GaAs/AlGaAs heterostructures grown by mo-lecular beam epitaxy, Phys. stat. sol. (a) 244, No. 8, 1740-2751 (2007).

9 S. R. Johnson, D. Ding, J.-B. Wang, S.-Q. Yu, and Y.-H. Zhang, Excitation Dependent Photoluminescence Measurements of the Nonradiative Lifetime and Quantum Efficiency in GaAs, J. Vac. Sci. Technol. B 25, 1077-82 (2007).

8 D. Ding, S. R. Johnson, J.-B. Wang, S.-Q. Yu, Y.-H. Zhang, Intrinsic Irreversibility in Semiconductor Light Emission, Phys. stat. sol. (c) 4, No. 5, 1698–1701 (2007).

2006

7 K. Hild, S. Wright, D. Lock, S. Jin, I. Marko, S. Sweeney, S. R. Johnson, S. Chaparro, S.-Q. Yu, and Y.-H. Zhang, Carrier recombination in 1.3µm GaAsSb/GaAs Quantum Well Lasers, Appl. Phys. Lett. 89, 173509 (2006).

6 J.-B. Wang, S. R. Johnson, D. Ding, S.-Q. Yu, Y.-H. Zhang, Influence of photon recycling on cooling efficiency and cooling power in semiconductor luminescence refrigeration, J. Appl. Phys. 100, 043502 (2006).

5 S.-Q. Yu, X. Jin, S. R. Johnson, Y.-H. Zhang, Gain Saturation and Carrier Distribution Effects in Molecular Beam Epitaxy Grown GaAsSb/GaAs Quantum Well Lasers, J. Vac. Sci. Technol. B 24, 1617 (2006).

2005 and earlier

4 N. Samal, S. R. Johnson, D. Ding, A. K. Samal, S.-Q. Yu, Y.-H. Zhang, High-Power Single-Mode Vertical-Cavity Surface-Emitting Lasers, Appl. Phys. Lett. 87, pp161108-1, (2005).

3 S. R. Johnson, C.-Z. Guo, S. A. Chaparro, Yu. G. Sadofyev, J.-B. Wang, Y. Cao, N. Samal, X. Jin, S.-Q. Yu, D. Ding, Y.-H. Zhang, GaAsSb/GaAs Band Alignment Evaluation for Long-Wave Photonic Applications, J. Crystal Growth 251, 521 (2003).

2 D.-S. Jiang, J.-B. Wang, X.-G. Liang, Z.-B. Chen, S.-Q. Yu, Y. Cao, Y.-H. Zhang, C. Navarro, S. Chaparro, S. R. Johnson, LUMINESCENCE PROPERTIES OF GaAsSb/GaAs QUANTUM WELL LASER STRUCTURES, JOURNAL OF INFRARED AND MILLIMETER WAVES, Vol.21 No.z1 P.7-10 (2002).

1 S. R. Johnson, S. Chaparro, J.-B. Wang, N. Samal, Y. Cao, Z.-B. Chen, C. Navarro, X. Jin, S.-Q. Yu, D. J. Smith, C.-Z. Guo, P. Dowd, W. Braun, Y.-H. Zhang, GaAs-Substrate Based Long-Wave Active Materials with Type-II Band Alignments, J. Vac. Sci. Technol. B 19, 1501 (2001).