Journal Papers

2017

79 Joe Margetis, Sattar Al-Kabi, Wei Du, Wei Dou, Yiyin Zhou, Thach Pham, Perry Grant, Seyed Ghetmiri, Aboozar Mosleh, Baohua Li, Jifeng Liu, Greg Sun, Richard Soref, John Tolle, Mansour Mortazavi, Shui-Qing Yu, “Si-based GeSn lasers with wavelength coverage of 2 to 3 μm and operating temperatures up to 180 K,” submitted to ACS Photonics.

78 Joe Margetis, Shui-Qing Fisher Yu, Nupur Bhargava, Baohua Li, Wei Du, John Tolle, “Strain Engineering in Epitaxial GexSn1-x: a Path towards Low-defect and High Sn-content Layers” accepted by Semiconductor Science and Technology.

77 Hugh OH Churchill, Gregory J Salamo, Shui-Qing Yu, Takayuki Hironaka, Xian Hu, Jeb Stacy, Ishiang Shih,” Toward Single Atom Chains with Exfoliated Tellurium,” Nanoscale Research Letters, v12, 1, 488 (2017)

76 J Margetis, A Mosleh, S Al-Kabi, SA Ghetmiri, W Du, W Dou, M Benamara, B Li, M Mortazavi, HA Naseem, S-Q Yu, J Tolle, “Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H 2 and N 2 carrier gas,” Journal of Crystal Growth, v 463, 128 (2017)

75 Wei Du, Seyed Ghetmiria, Sattar Al-Kabia, Aboozar Moslehc, Thach Phama, Yiyin Zhoua, Huong Trana, Greg Sune, Richard Sorefe, Joe Margetisf, John Tollef, Baohua Lid, Mansour Mortazavib, Hameed Naseema, Shui-Qing Yu, “Silicon-based Ge0. 89Sn0. 11 photodetector and light emitter towards mid-infrared applications,” Proc. of SPIE, v10108, 1010813-1 (2017)

74 Seyed Amir Ghetmiri, Yiyin Zhou, Joe Margetis, Sattar Al-Kabi, Wei Dou, Aboozar Mosleh, Wei Du, Andrian Kuchuk, Jifeng Liu, Greg Sun, Richard A Soref, John Tolle, Hameed A Naseem, Baohua Li, Mansour Mortazavi, Shui-Qing Yu, “Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics,” Optics Letters, v42, 3, 387 (2017)

73 G.E. Mazur, Y.I., Dorogan, V.G., Dias, L., Fan, D., Schmidbauer, M., Ware, M.E., Zhuchenko, Z.Y., Kurlov, S.S., Tarasov, G.G., Yu, S.Q. and Marques, “Luminescent properties of GaAsBi/GaAs double quantum well,” Journal of Luminescence, v188, 209 (2017)

2016

72 Sattar Al-Kabi, Seyed Amir Ghetmiri, Joe Margetis, Wei Du, Aboozar Mosleh, Wei Dou, Greg Sun, Richard A Soref, John Tolle, Baohua Li, Mansour Mortazavi, Hameed A Naseem, Shui-Qing Yu, “Study of High-Quality GeSn Alloys Grown by Chemical Vapor Deposition towards Mid-Infrared Applications,” Journal of Electronic Materials, v45, 6251 (2016)

71 Wei Du, S Al-Kabi, Seyed Ghetmiri, Huong Tran, Thach Pham, Bader Alharthi, Aboozar Mosleh, Joe Margetis, John Tolle, Hameed A Naseem, Mansour Mortazavi, Greg Sun, Richard Soref, B Li, Shui-Qing Yu, “Development of SiGeSn Technique Towards Mid-Infrared Devices in Silicon Photonics,” ECS Transactions, v75, 231 (2016)

70 S. Al-Kabi, S.A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R.A. Soref, J. Tolle, B. Li, M. Mortazavi, H.A. Naseem, and S.-Q. Yu,”An optically pumped 2.5 μm GeSn laser on Si operating at 110 K.” Appl. Phys. Lett. 109, 171105 (2016)

69 S. Al-Kabi, S.A. Ghetmiri, J. Margetis, W. Du, A. Mosleh, W. Dou, G. Sun, R.A. Soref, J. Tolle, B. Li, M. Mortazavi, H.A. Naseem, and S.-Q. Yu, “Optical Characterization of Si-Based Ge1−xSnx Alloys with Sn Compositions up to 12%,” Journal of Elec Materi (2016) 45: 2133.

68 Dou, W., Ghetmiri, S.A., Al-Kabi, S., Mosleh, A., Zhou, Y., Alharthi, B., Du, W., Margetis, J., Tolle, J., Kuchuk, A. and Benamara, M. “,Structural and Optical Characteristics of GeSn Quantum Wells for Silicon-Based Mid-Infrared Optoelectronic Applications.” Journal of Electronic Materials, pp.1-8, 2016.

67 Mosleh, Aboozar, Murtadha Alher, Larry C. Cousar, Wei Du, Seyed Amir Ghetmiri, Sattar Al-Kabi, Wei Dou et al. “Buffer-Free GeSn and SiGeSn Growth on Si Substrate Using In Situ SnD4 Gas Mixing.” Journal of Electronic Materials 45, no. 4 (2016): 2051-2058.

66 Zhou, Yiyin, Wei Dou, Wei Du, Thach Pham, Seyed Amir Ghetmiri, Sattar Al-Kabi, Aboozar Mosleh et al. “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications.” Journal of Applied Physics 120, no. 2 (2016): 023102.

65 Tran, Huong, Wei Du, Seyed A. Ghetmiri, Aboozar Mosleh, Greg Sun, Richard A. Soref, Joe Margetis et al. “Systematic study of Ge1? xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics.” Journal of Applied Physics 119, no. 10 (2016): 103106.

64 Pham, Thach, Wei Du, Huong Tran, Joe Margetis, John Tolle, Greg Sun, Richard A. Soref, Hameed A. Naseem, Baohua Li, and Shui-Qing Yu. “Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection.” Optics Express 24, no. 5 (2016): 4519-4531.

63 Steele, J. A., Roger A. Lewis, Josip Horvat, Mitchell John Bromley Nancarrow, M. Henini, D. Fan, Y. I. Mazur et al. “Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi.” Scientific Reports 6 (2016).

62 Soref, Richard, Dan Buca, and Shui-Qing Yu. “Group IV Photonics: Driving Integrated Optoelectronics.” Optics and Photonics News 27, no. 1 (2016): 32-39.

61 Mosleh, Aboozar, Murtadha Alher, Wei Du, Larry C. Cousar, Seyed Amir Ghetmiri, Sattar Al-Kabi, Wei Dou et al. “SiyGe1? x? ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system.” Journal of Vacuum Science & Technology B 34, no. 1 (2016): 011201.

 

2015

60 Mosleh, Aboozar, Murtadha A. Alher, Larry Cousar, Husam Abusafe, Wei Dou, Perry Grant, Sattar Al-Kabi et al. “Enhancement of Material Quality of (Si) GeSn Films Grown by SnCl4 Precursor.” ECS Transactions 69, no. 5 (2015): 279-286.

59 Alher, Murtadha A., Aboozar Mosleh, Larry Cousar, Wei Dou, Perry Grant, Seyed Amir Ghetmiri, Sattar Al-Kabi et al. “CMOS Compatible Growth of High Quality Ge, SiGe and SiGeSn for Photonic Device Applications.” ECS Transactions 69, no. 5 (2015): 269-278.

58 Du, Wei, Thach Pham, Joe Margetis, Huong Tran, Seyed A. Ghetmiri, Aboozar Mosleh, Greg Sun et al. “Si based mid-infrared GeSn photo detectors and light emitters.” In SPIE Nanoscience+ Engineering, pp. 95550E-95550E. International Society for Optics and Photonics, 2015.

57 Steele, J. A., Josip Horvat, Roger A. Lewis, M. Henini, D. Fan, Yu I. Mazur, V. G. Dorogan, P. C. Grant, S-Q. Yu, and G. J. Salamo. “Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructures.” Nanoscale 7, no. 48 (2015): 20442-20450.

56 Mosleh, Aboozar, Murtadha Alher, Wei Du, Larry C. Cousar, Seyed Amir Ghetmiri, Sattar Al-Kabi, Wei Dou et al. “SiyGe1? x? ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system.”Journal of Vacuum Science & Technology B 34, no. 1 (2016): 011201.

55 Al-Kabi, Sattar, Seyed Amir Ghetmiri, Joe Margetis, Wei Du, Aboozar Mosleh, Murtadha Alher, Wei Dou et al. “Optical Characterization of Si-Based Ge1? x Sn x Alloys with Sn Compositions up to 12%.” Journal of Electronic Materials 45, no. 4 (2016): 2133-2141.

54 T. Pham, W. Du, B.R. Conley, J. Margetis, G. Sun, R.A. Soref, J. Tolle, B. Li, and S.Q. Yu, /Si-based Ge0.9Sn0.1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 µm/, Electronics Letters, 51 (11) p854 – 856. DOI:  10.1049/el.2015.0331

53 Yu. I. Mazur, V. G. Dorogan, L. D. de Souza, D. Fan, M. Benamara, M. Schmidbauer, M. E. Ware, G. G. Tarasov, S.-Q. Yu, G. E. Marques, and G. J. Salamo, /Luminescent properties of GaAsBi /GaAs double quantum well structures/, Submitted to Journal of Applied Physics, under review.

52 Aboozar Mosleh, Murtadha Alher, Larry C. Cousar, Wei Du, Seyed Amir Ghetmiri, Tach Pham, Benjamin R. Conley, Joshua M. Grant, Greg Sun, Richard A. Soref, Baohua Li, Hameed. A. Naseem, and Shui-Qing Yu, /Direct growth of Ge1-xSnx films on Si using a cold-wall ultra-high-vacuum chemical-vapor-deposition system/, Frontiers in Materials2:30. DOI: 10.3389/fmats.2015.00030.

 

2014

51 Benjamin R. Conley, Joe Margetis, Wei Du, Huong Tran, Aboozar Mosleh, Seyed Amir Ghetmiri, John Tolle, Greg Sun, Richard Soref, Baohua Li, Hameed A. Naseem, and Shui-Qing Yu, /Si based GeSn photoconductors with a 1.63A/W peak responsivity and a 2.4?m longwavelength cutoff/, Applied Physics Letters, 105, 221117 (2014).

50 Joe Margetis, Seyed Amir Ghetmiri, Wei Du, Benjamin R. Conley, Aboozar Mosleh, Richard A. Soref, Greg Sun, Lucas Domulevicz, Hameed A. Naseem, Shui-Qing Yu, and John Tolle, /Growth and characterization of Ge1-xSnx alloys deposited using a commercial CVD system/, ECS Transactions, 64 (6) 711-720 (2014).

49 A. Mosleh, M. Benamara, S.A. Ghetmiri, B. Conley, W. Du, J. Tolle, S.-Q. Yu, H. Naseem, /Investigation of defect formation and propagation in GeSn thin films, ECS Transactions/, 64 (6) 895-901 (2014).

48 B. R. Conley, A. Mosleh, S. A. Ghetmiri, G. Sun, R. Soref, J. Tolle, H. A. Naseem, S.-Q. Yu, /Stability of Pseudomorphic and Compressively Strained Ge1-xSnx Thin Films under Rapid Thermal Annealing/, ECS Transactions, 64 (6) 881-893 (2014).

47 Aboozar Mosleh, Hameed A. Naseem, Zafar Waqar, Shui-Qing Yu, Husam Abu-Safe, Seyed Amir Ghetmiri, Benjamin R. Conley, Mourad Benamara, /Investigation of Growth Mechanism and Role of H2 in Very Low Temperature Si Epitaxy/, ECS Transactions, 64 (6) 967-975 (2014).

46 Seyed Amir Ghetmiri, Wei Du, Joe Margetis, Aboozar Mosleh, Larry Cousar, Benjamin R. Conley, Lucas Domulevicz, Amjad Nazzal, Greg Sun, Richard A. Soref, John Tolle, Baohua Li, Hameed A. Naseem, and Shui-Qing Yu, “Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence”, Appl. Phys. Lett., Vol. 105, Issue 15, pp. 151109 (2014).

45 Seyed Amir Ghetmiri, Wei Du, Benjamin R. Conley, Aboozar Mosleh, Amjad Nazzal, Richard A. Soref, Greg Sun, Joe Margetis, John Tolle, Hameed A.  Naseem, and Shui-Qing Yu, “Near and mid-infrared photoluminescence from Ge1-xSnx thin films on Si substrates,” JVST B, 32, 060601 (2014).  This paper was selected as the Featured Letters by JVST B on 12/16/2014.

44 Wei Du, Seyed A. Ghetmiri, Benjamin R. Conley, Aboozar Mosleh, Amjad Nazzal, Richard A. Soref, Greg Sun, John Tolle, Joe Margetis, Hameed A. Naseem, and Shui-Qing Yu, “Competition of optical transitions between direct and indirect bandgaps in Ge1-xSnx,” Appl. Phys. Lett., vol. 105, pp. 051104 (2014), Highlighted for the latest research in thin film by AIP, http://aip-info.org/1XPS-2OZ9V-64C9M6MI78/cr.aspx

43 Wei Du, Yiyin Zhou, Seyed A. Ghetmiri, Aboozar Mosleh, Benjamin R. Conley, Amjad Nazzal, Richard A. Soref, Greg Sun, John Tolle, Joe Margetis, Hameed A. Naseem, and Shui-Qing Yu, “Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge double heterostructure LEDs on Si substrates via CVD,” Appl. Phys. Lett., vol. 104, pp. 241110 (2014)

42 Benjamin R. Conley, Aboozar Mosleh, Seyed Amir Ghetmiri, Wei Du, Richard A. Soref, Greg Sun, Joe Margetis, John Tolle, Hameed A. Naseem, and Shui-Qing Yu, “Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection,” Opt. Express Vol. 22, No. 13, pp. 15639-15652 (2014).

41 P. C. Grant, D. Fan, A. Mosleh, V. G. Dorogan, M. E. Hawkridge, Y. I. Mazur,  M. Benamara, S.-Q. Yu, G. J. Salamo, /Rapid thermal annealing effect on GaAsBi/GaAs single quantum wells grown by molecular beam epitaxy/, J. Vac. Sci. Technol. B, 32, 02C119 (2014)

40 J. A. Steele, R. A. Lewis, M. Henini, O. M. Lemine, A. Alkaoud, D. Fan, Yu.I. Mazur, V. G. Dorogan, P. C. Grant, S.-Q. Yu, and G. J. Salamo, /Raman reveals strong LO-phonon-hole-plasmon coupling in undoped GaAsBi/, Optics Express , Vol. 22, No. 10, 11680-11689 (2014).

39 Yu. I. Mazur, M. D. Teodoro, L. Dias de Souza, M. E. Ware, D. Fan, S.-Q. Yu, G. G. Tarasov, G. E. Marques and G. J. Salamo, /Low temperature magneto-photoluminescence of GaAsBi /GaAs quantum well heterostructures/, Journal of Applied Physics 115, 123518 (2014).

38 Aboozar Mosleh, Seyed Amir Ghetmiri, Benjamin R. Conley, Michael Hawkridge, Mourad Benamara, John Tolle, Shui-Qing Yu, Hameed A. Naseem, /Strain Engineering of High Quality CVD Grown Gesn Films for Optoelectronic Devices/, Journal of Electronic Materials, DOI: 10.1007/s11664-014-3089-2 (2014)

37 Mohammad Ali Khorrami, Samir El-Ghazaly, Hameed Naseem, Shui-Qing Yu, Global Modeling of Active Terahertz Plasmonic Devices, IEEE Transactions on Terahertz Science and Technology, Vol. 4, No. 1, pp101-109, January

(2014)

 

2013

36 Huajun Zhou, Huixu Deng, Seyed Ghetmiri, Husam Abu-Safe, Shui-Qing Yu, Xiaodong Yang, Z. Tian, /Optimizing Height and Packing-Density of Oriented One-Dimensional Photocatalysts for Efficient Water-Photolysis/, The Journal of Physical Chemistry C vol. 117 issue 40 October 10, 2013. p.20778-20783

35 Yu. I. Mazur, V. G. Dorogan, L. D. de Souza, D. Fan, M. Benamara, M. Schmidbauer, M. E. Ware, G. G. Tarasov, S.-Q. Yu, G. E. Marques and G. J. Salamo, /Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1-xBix /GaAs heterostructures/, Nanotechnology 25(2014) 035702(9pp)

34 Asmaa Elkadi, Emmanuel Decrossas, Shui-Qing Yu, Hameed A. Naseem, and Samir M. El-Ghazaly, /Aligned semiconducting single-walled carbon nanotubes: Semi-analytical solution/, J. Appl. Phys. 114, 114306 (2013).

33 Zhaoquan Zeng, Timothy A. Morgan, Dongsheng Fan, Chen Li, Yusuke Hirono, Xian Hu, Yanfei Zhao, Joon Sue Lee, Jian Wang, Zhiming M. Wang, Shuiqing Yu, Michael E. Hawkridge, Mourad Benamara, and Gregory J. Salamo, /Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction/, AIP Advances 3, 072112 (2013)

*This paper was highlighted in AIP and chosen as Editor’s picks. Further, it was reported by Science Daily and EurekAlert.

32 Greg Sun, Shui-Qing Yu, /The SiGeSn Approach towards Si-based Lasers/, Invited paper, Solid-State Electronics 83 (2013) 76–81

31 D. Fan, P. C. Grant, S.-Q. Yu, V. G. Dorogan, X. Hu, Z. Zeng, C. Li, M. E. Hawkridge, M. Benamara, Yu, I. Mazur, G. J. Salamo, S. R. Johnson, Zh. M. Wang, /MBE Grown GaAsBi/GaAs Double Quantum Well Separate Confinement Heterostructures/, J. Vac. Sci. Technol. B 31, 03C105 (2013)

30 N. Hossain, K. Hild, S. R. Jin, S.-Q. Yu, S. R. Johnson, D. Ding, and Y. H. Zhang, S. J. Sweeney, /The influence of growth conditions on carrier recombination mechanisms in 1.3 µm GaAsSb/GaAs quantum well lasers/, Appl. Phys. Lett. 102, 041106 (2013)

29 Yu. I. Mazur, V. G. Dorogan, M. Schmidbauer, G. G. Tarasov, S. R. Johnson, X. Lu, S.-Q. Yu, T. Tiedje, and G. J. Salamo, /Strong excitation intensity dependence of the photoluminescence line shape in GaAs1-xBix single quantum well samples/, J. Appl. Phys. 113, 144308 (2013)

28 Yu. I. Mazur, V. G. Dorogan, M. Benamara, M. E. Ware, M. Schmidbauer, G. G. Tarasov, S. R. Johnson, X. Lu, S.-Q. Yu, T. Tiedje, and G. J. Salamo, /Effects of spatial confinement and layer disorder in photoluminescence of GaAs1-xBix /GaAs heterostructures/, J. Phys. D: Appl. Phys. 46 (2013) 065306

 

2012

27 G. Blume, K. Hild, I.P. Marko, S.J. Sweeney, T.J.C. Hosea, S.-Q. Yu, S. R. Johnson and Y.-H Zhang, /Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements/, In preparation, J. Appl. Phys. 112, 033108 (2012)

26 D.   Fan, , Z. Zeng, X. Hu, V. G. Dorogan, C. Li, M. Benamara, M. E. Hawkridge, Yu, I. Mazur, S.-Q. Yu, S. R. Johnson, Zh. M. Wang, and G. J. Salamo, /Molecular Beam Epitaxy Growth of GaAsBi/GaAs/AlGaAs Separate Confinement Heterostructures/, Appl. Phys. Lett., vol. 101, pp. 181103, 2012

25 Mohammad Ali Khorrami, Samir El-Ghazaly, Shui-Qing Yu, and Hameed Naseem, /Terahertz plasmon amplification using two-dimensional electron-gas layers/, J. Appl. Phys. 111, 094501 (2012)

24 Dongsheng Fan, Zhaoquan Zeng, Vitaliy G. Dorogan, Yusuke Hirono, Chen Li, Yuriy I. Mazur, Shui-Qing Yu, Shane R. Johnson, Zhiming M. Wang, Gregory J. Salamo, /Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy/, J Mater Sci: Mater Electron, DOI 10.1007/s10854-012-0987-z

 

2011

23 C. Li, Z. Q. Zeng, D. S. Fan, Y. Hirono, J. Wu, T. A. Morgan, S.-Q. Yu, Zh. M. Wang, G. J. Salamo, Bismuth Nano-droplets for Group-V Based Molecular-Beam Droplet Epitaxy, Appl. Phys. Lett., 99, 243113 (2011)

22 D. Ding, S. R. Johnson, S.-Q. Yu, S.-N. Wu, and Y.-H. Zhang, A Semi-Analytical Model for Semiconductor Solar Cells, J. Appl. Phys., 110, 123104 (2011)

21 K. Hild, I.P. Marko, S.J. Sweeney, S.R. Johnson, S.-Q. Yu, and Y.-H. Zhang, Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3µm GaAsSb/GaAs Vertical Cavity Surface Emitting Lasers, Appl. Phys. Lett. 99, 071110 (2011).

20 Yu. I. Mazur, V. G. Dorogan, M. Schmidbauer, G. G. Tarasov, S. R. Johnson, X. Lu, S.-Q. Yu, Zh. M. Wang, T. Tiedje, and G. J. Salamo, Optical evidence of quantum well channel in low-temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructures, Nanotechnology 22 (2011) 375703

19 S.-N. Wu, S.-Q. Yu, D. Ding, S. R. Johnson, and Y.-H. Zhang, Ultra High Luminescence Extraction via the Monolithic Integration of a Light Emitting Active Region with a Semiconductor Hemisphere, J. Vac. Sci. Technol. B 29, 031213, 2011

 

2010

18 Zhenhua Li, Jiang Wu, Zhiming M. Wang, Dongsheng Fan, Aqiang Guo, Shibing Li, Shui-Qing Yu Omar Manasreh, Gregory J. Salamo, InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications, Nanoscale Res Lett, DOI 10.1007/s11671-010-9605-2

17 Song-Nan Wu, Ding Ding, Shane R. Johnson, Shui-Qing Yu, and Yong-Hang Zhang, Four-Junction Solar Cells Using Lattice-Matched II-VI and III-V Semiconductors, Prog. Photovolt: Res. Appl. 2010; 18:1–7

 

2009

16 Song-Nan Wu, Ding Ding, Shane R. Johnson, Shui-Qing Yu, and Yong-Hang Zhang, Four-Junction Solar Cells Using Lattice-Matched II-VI and III-V Semiconductors,Prog. Photovolt: Res. Appl. 2010; 18:1–7

15 Jay Mathews, Radek Roucka, Junqi Xie, Shui-Qing Yu, José Menéndez, and John Kouvetakis, Extended performance GeSn/Si(100)  p-i-n photodetectors for full spectral range telecommunication applications,Appl. Phys. Lett., 95, 133506 (2009)

 

2008

14 Radek Roucka, Jay Mathews, Vijay D’Costa, Junqi Xie, John Tolle, Shui-Qing Yu, Jose Menendez, John Kouvetakis, Ge1-ySny photoconductor structures at 1.55µm: From advanced materials to prototype devices, J. Vac. Sci. Technol. B 26, 1952-1959 (2008)

13 S.-Q. Yu, Y. Cao, S. R. Johnson, and Y.-H. Zhang, Y.-Z. Huang, GaSb based midinfrared equilateral-triangle-resonator semiconductor lasers, J. of Vac. Sci. & Tech. B, 26, 56 (2008).

 

2007

12 S.-Q. Yu, D. Ding, J.-B Wang, N. Samal, X. Jin, Y. Cao Y, S. R. Johnson SR, Y.-H. Zhang, High performance GaAsSb/GaAs quantum well lasers, J. of Vac. Sci. & Tech. B, 25, 1658 (2007)

11 K. Hild, S. J. Sweeney, I. P. Marko, S. R. Jin, S. R. Johnson, S. A. Chaparro, S.-Q. Yu, Y.-H. Zhang, Temperature and pressure dependence of carrier recombination processes in GaAsSb/GaAs quantum well lasers, physica status solidi (b), 244, 197 (2007).

10 S. R. Johnson, D. Ding, J.-B. Wang, S.-Q. Yu, Y.-H. Zhang, Excitation Dependent Photoluminescence Measurements of Nonradiative Lifetime and Quantum Efficiency in Bulk GaAs/AlGaAs, J. Vac. Sci. Technol. B, (accepted).

9 J.-B. Wang, D. Ding, S. R. Johnson, S.-Q. Yu, and Y.-H. Zhang, Determination and improvement of spontaneous emission quantum efficiency in GaAs/AlGaAs heterostructures grown by molecular beam epitaxy, physical status solidi (b), 244, 2740 (2007).

8 D. Ding, S. R. Johnson, J.-B. Wang, S.-Q. Yu, Y.-H. Zhang, Intrinsic Irreversibility in Semiconductor Light Emission, Phys. Stat. Sol. (c)4, No.5, 1698 (2007).

7 J.-B. Wang, and Y.-H. Zhang, Increased power conversion efficiency through photon recycling in quantum well lasers, physica status solidi (c)4, No.5, 1601 (2007).

 

2006

6 K. Hild, S. J. Sweeney, S. Wright, D. A. Lock, S. R. Jin, I. P. Marko, S. R. Johnson, S. A. Chaparro, S.-Q. Yu, Y.-H. Zhang, Carrier recombination in 1.3 µm GaAsSb/GaAs Quantum Well Lasers, Appl. Phys. Lett. 89, 173509 (2006).

5 J.-B.Wang, S. R. Johnson, D. Ding, S.-Q. Yu, Y.-H. Zhang, Influence of photon recycling on semiconductor luminescence refrigeration , J. Appl. Phys., 100, 043502 (2006).

4 S.-Q. Yu, X. Jin, S. R. Johnson, Y.-H. Zhang, Gain saturation and carrier distribution effects in molecular beam epitaxy grown GaAsSb/GaAs quantum well lasers, J. Vac. Sci. Technol. B 24, 1617 (2006).

 

2005 and earlier

3 N. Samal, S. R. Johnson, D. Ding, A. K. Samal, S.-Q. Yu, Y.-H. Zhang, High-Power Single-Mode Vertical-Cavity Surface-Emitting Lasers, Appl. Phys. Lett. 87, 161108 (2005).

2 S. R. Johnson, C.-Z. Guo, S. Chaparro, Yu. G. Sadofyev, J.-B. Wang, Y. Cao, N. Samal, X. Jin, S.-Q. Yu, D. Ding, Y.-H. Zhang, GaAsSb/GaAs Band Alignment Evaluation for Long-Wave Photonic Applications, J. Crystal Growth 251, 521 (2003).

1 S. R. Johnson, S. Chaparro, J. Wang, N. Samal, Y. Cao, Z. B. Chen, C. Navarro, J. Xu, S.-Q. Yu, David J. Smith, C.-Z. Guo, P. Dowd, W. Braun, and Y.-H. Zhang, GaAs-substrate-based long-wave active materials with type-II band alignments, J. Vac. Sci. & Technol., 19(4), 1501 (2001).