Journal Papers
176 Jie Zhou, Daniel Vincent, Sudip Acharya, Solomon Ojo, Alireza Abrand, Yang Liu, Jiarui Gong, Dong Liu, Samuel Haessly, Jianping Shen, Shining Xu, Yiran Li, Yi Lu, Hryhorii Stanchu, Luke Mawst, Bruce Claflin, Parsian K. Mohseni, Zhenqiang Ma, Shui-Qing Yu. Grafted AlGaAs/GeSn Optical Pumping Laser Operating up to 130 K. 10.48550/arXiv.2409.09752.
175 Shangda Li, Shang Liu, Hryhorii Stanchu, Grey Abernathy, Baohua Li, Shui-Qing Yu, Xiaoxin Wang, Jifeng Liu “Ion Implantation Damage Recovery in GeSn Thin Films,” in IEEE Journal of Selected Topics in Quantum Electronics, vol. 31, no. 1: SiGeSn Infrared Photon. and Quantum Electronics, pp. 1-8, Jan.-Feb. 2025, Art no. 8100208, doi: 10.1109/JSTQE.2024.3457154
174 Haochen Zhao, Shang Liu, Suho Park, Xu Feng, Zhaoquan Zeng, James Kolodzey, Shui-Qing Yu, Jifeng Liu, Yuping Zeng, “Composition Quantification of SiGeSn Alloys Through Time-of-Flight Secondary Ion Mass Spectrometry: Calibration Methodologies and Validation With Atom Probe Tomography,” in IEEE Journal of Selected Topics in Quantum Electronics, vol. 31, no. 1: SiGeSn Infrared Photon. and Quantum Electronics, pp. 1-8, Jan.-Feb. 2025, Art no. 7900208, doi: 10.1109/JSTQE.2024.3456439
173 Nicholas RossonDevelopment of GeSn epitaxial films with strong direct bandgap luminescence in the mid-wave infrared region using a commercial chemical vapor deposition reactor. J. Vac. Sci. Technol. B 1 September 2024; 42 (5): 052210. Sudip Acharya Alec M. Fischer Bria Collier Abdulla Ali Ali Torabi Wei Du Shui-Qing Yu Robin C. Scott;
172 Yang Liu, Jiarui Gong, Sudip Acharya, Yiran Lia, Alireza Abrand, Justin M. Rudie, Jie Zhou, Yi Lu, Haris Naeem Abbasi, Daniel Vincent, Samuel Haessly, Tsung-Han Tsai, Parsian K. Mohseni, Shui-Qing Yu, Zhenqiang Ma. Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy. 10.48550/arXiv.2408.16884
171 Zhang, Diandian, Shui-Qing Yu, Gregory J. Salamo, Richard A. Soref, and Wei Du. 2024. “Modeling Study of Si3N4 Waveguides on a Sapphire Platform for Photonic Integration Applications” Materials 17, no. 16: 4148.
170 Yang Liu, Yiran Li, Sudip Acharya, Jie Zhou, Jiarui Gong, Alireza Abrand, Yi Lu, Daniel Vincent, Samuel Haessly, Parsian K. Mohseni, Shui-Qing Yu, Zhenqiang Ma. AlGaAs/GeSn p-i-n diode interfaced with ultrathin Al2O3. 10.48550/arXiv.2408.08451.
169 Wangila, Emmanuel, Calbi Gunder, Mohammad Zamani-Alavijeh, Fernando Maia de Oliveira, Serhii Kryvyi, Aida Sheibani, Yuriy I. Mazur, Shui-Qing Yu, and Gregory J. Salamo. 2024. “High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam” Crystals 14, no. 8: 724.
168 Sudip Acharya, Hryhorii Stanchu, Rajesh Kumar, Solomon Ojo, Murtadha Alher, Mourad Benamara, Guo-En Chang, Baohua Li, Wei Du, Shui-Qing Yu, “Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K,” in IEEE Journal of Selected Topics in Quantum Electronics, vol. 31, no. 1: SiGeSn Infrared Photon. and Quantum Electronics, pp. 1-7, Jan.-Feb. 2025, Art no. 1500507, doi: 10.1109/JSTQE.2024.3430060.
167 S. -Q. Yu, G. Salamo and W. Du, “Feasibility Study of Photonic Integrated Circuits on Sapphire Platform,” 2024 IEEE Photonics Society Summer Topicals Meeting Series (SUM), Bridgetown, Barbados, 2024, pp. 01-02, doi: 10.1109/SUM60964.2024.10614508.
166 Shang Liu, Yunfan Liang, Haochen Zhao, Nirosh M. Eldose, Jin-Hee Bae, Omar Concepcion, Xiaochen Jin, Shunda Chen, Ilias Bikmukhametov, Austin Akey, Cory T. Cline, Alejandra Cuervo Covian, Xiaoxin Wang, Tianshu Li, Yuping Zeng, Dan Buca, Shui-Qing Yu, Gregory J. Salamo, Shengbai Zhang, Jifeng Liu. Comparison of Short-Range Order in GeSn Grown by Molecular Beam Epitaxy and Chemical Vapor Deposition, 10.48550/arXiv.2407.02767.
165 Lilian M Vogl, Peter Schweizer, Shunda Chen, Xiaochen Jin, Shui-Qing Yu, Dana O Byrne, Frances I Allen, Jifeng Liu, Tianshu Li, Andrew M Minor. Exploring Short-Range Ordering in Semiconducting Materials.
164 Jie ZhouGaAs/GeSn/Ge n–i–p diodes and light emitting diodes formed via grafting. J. Vac. Sci. Technol. B 1 July 2024; 42 (4): 042213 Haibo Wang Po Rei Huang Shengqiang Xu Yang Liu Jiarui Gong Jianping Shen Daniel Vicent Samuel Haessly Alireza Abrand Parsian K. Mohseni Munho Kim Shui-Qing Yu Guo-En Chang Xiao Gong Zhenqiang Ma;
163 Hryhorii StanchuDevelopment of aspect ratio trapping growth of GeSn on Si for midwave infrared applications. J. Vac. Sci. Technol. B 1 July 2024; 42 (4): 042802. Grey Abernathy Joshua Grant Fernando M. de Oliveira Yuriy I. Mazur Jifeng Liu Wei Du Baohua Li Gregory J. Salamo Shui-Qing Yu;
162 Joshua M. GrantIn situ mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes. J. Vac. Sci. Technol. B 1 July 2024; 42 (4): 044002 Enbo Yang Narges Masoumi Alexander Golden Joe Margetis Andrew Chizmeshya Wei Du Shui-Qing Yu;
161 S. Ghosh, G. Sun, S. -Q. Yu and G. -E. Chang, “Impact of Carrier Momentum (k)-Space Separation on GeSn Infrared Photodetectors,” in IEEE Journal of Selected Topics in Quantum Electronics, vol. 31, no. 1: SiGeSn Infrared Photon. and Quantum Electronics, pp. 1-11, Jan.-Feb. 2025, Art no. 3800211, doi: 10.1109/JSTQE.2024.3419839
160 Melvina Chen, Hyo-Jun Joo, Eng-Huat Toh, Elgin Quek, Zoran Ikonic, Wei Du, Shui-Qing Yu, and Donguk Nam “Strain-engineered GeSn microlasers with lithographically adjustable emission wavelengths”, Proc. SPIE 13002, Semiconductor Lasers and Laser Dynamics XI, 1300209 (20 June 2024).
159 Justin Rudie, Sylvester Amoah, Xiaoxin Wang, Rajesh Kumar, Grey Abernathy, Steven Akwabli, Perry C. Grant, Jifeng Liu, Baohua Li, Wei Du, Shui-Qing Yu. (2024). Monolithic Germanium Tin on Si Avalanche Photodiodes. 10.48550/arXiv.2405.13761.
158 Gunder, C.; Zamani-Alavijeh, M.; Wangila, E.; Maia de Oliveira, F.; Sheibani, A.; Kryvyi, S.; Attwood, P.C.; Mazur, Y.I.; Yu, S.-Q.; Salamo, G.J. Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy. Nanomaterials 2024, 14, 909. https://doi.org/10.3390/nano14110909
157 A. R. Ellis, D. A. Duffy, I. P. Marko, S. Acharya, W. Du, S. Q-. Yu & S. J. Sweeney Challenges for room temperature operation of electrically pumped GeSn lasers. Sci Rep 14, 10318 (2024). https://doi.org/10.1038/s41598-024-60686-3
156 Tyler T. McCarthyMolecular beam epitaxy growth and characterization of GePb alloys. J. Vac. Sci. Technol. B 1 May 2024; 42 (3): 032210. https://doi.org/10.1116/6.0003567 Allison M. McMinn Xiaoyang Liu Razine Hossain Xin Qi Zheng Ju Mark Mangus Shui-Qing Yu Yong-Hang Zhang;
155 Sylvester AmoahEffects of ion implantation with arsenic and boron in germanium-tin layers. J. Vac. Sci. Technol. B 1 May 2024; 42 (3): 034002. https://doi.org/10.1116/6.0003565 Hryhorii Stanchu Grey Abernathy Serhii Kryvyi Fernando M. De Oliveira Yuriy I. Mazur Shangda Li Shang Liu Jifeng Liu Wei Du Baohua Li Gregory Salamo Shui-Qing Yu;
154 Wangila, E.; Gunder, C.; Lytvyn, P.M.; Zamani-Alavijeh, M.; Maia de Oliveira, F.; Kryvyi, S.; Stanchu, H.; Sheibani, A.; Mazur, Y.I.; Yu, S.-Q.; et al. The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire. Crystals 2024, 14, 414. https://doi.org/10.3390/cryst14050414
153 Yunfan Liang, Shunda Chen, Xiaochen Jin, Damien West, Shui-Qing Yu, Tianshu Li & Shengbai Zhang “Group IV topological quantum alloy and the role of short-range order: the case of Ge-rich Ge1–xPbx” npj Comput Mater 10, 82 (2024). https://doi.org/10.1038/s41524-024-01271-0
152 Hryhorii Stanchu, Serhii Kryvyi, Stephen Margiotta, Matthew Cook, Joshua Grant, Huong Tran, Sudip Acharya, Fernando M de Oliveira, Yuriy I Mazur, Mourad Benamara, Clifford A King, Wei Du, Baohua Li, Gregory Salamo and Shui-Qing Yu. “Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate”. Published 28 March 2024. IOP Publishing Ltd. DOI 10.1088/1361-6463/ad365b.
151 Perry C. GrantAuger-limited minority carrier lifetime in GeSn/SiGeSn quantum well. Appl. Phys. Lett. 11 March 2024; 124 (11): 111110. https://doi.org/10.1063/5.0198126
Preston T. Webster Rigo A. Carrasco Julie V. Logan Christopher P. Hains Nathan Gajowski Shui-Qing Yu Baohua Li Christian P. Morath Diana Maestas;
150 Reboud, O. Concepción, W. Du, M. El Kurdi, J.M. Hartmann, Z. Ikonic, S. Assali, N. Pauc, V. Calvo, C. Cardoux, E. Kroemer, N. Coudurier, P. Rodriguez, S.-Q. Yu, D. Buca, A. Chelnokov, Advances in GeSn alloys for MIR applications, Photonics and Nanostructures – Fundamentals and Applications, Volume 58, 2024, 101233, ISSN 1569-4410, https://doi.org/10.1016/j.photonics.2024.101233.
149 Gunder C, Maia de Oliveira F, Wangila E, Stanchu H, Zamani-Alavijeh M, Ojo S, Acharya S, Said A, Li C, Mazur YI, Yu SQ, Salamo GJ. The growth of Ge and direct bandgap Ge1-xSnx on GaAs (001) by molecular beam epitaxy. RSC Adv. 2024 Jan 3;14(2):1250-1257. doi: 10.1039/d3ra06774b. PMID: 38174282; PMCID: PMC10762728.
148 Wangila, E.; Lytvyn, P.; Stanchu, H.; Gunder, C.; de Oliveira, F.M.; Saha, S.; Das, S.; Eldose, N.; Li, C.; Zamani-Alavijeh, M.; et al. “Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy”. Crystals2023, 13, 1557.
147 Abernathy, G., Ojo, S., Said, A. et al. “Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission”. Sci Rep13, 18515 (2023). https://doi.org/10.1038/s41598-023-45916-4.
146 Nirosh M. Eldose, Hryhorii Stanchu, Subhashis Das, Ilias Bikmukhametov, Chen Li, Satish Shetty, Yuriy I. Mazur, Shui-Qing Yu, and Gregory J. Salamo, “Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge1–xSnx Epilayers Grown by MBE at Different Temperatures”, Crystal Growth & Design 2023 23 (11), 7737-7743.
145 Wangila, E.; Lytvyn, P.; Stanchu, H.; Gunder, C.; de Oliveira, F.M.; Saha, S.; Das, S.; Eldose, N.; Li, C.; Zamani-Alavijeh, M.; Benamara, M.; Mazur, Y.I.; Yu, S.-Q.; Salamo, G.J. “Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy”. Crystals 2023, 13, 1557.
144 Rahul Kumar, Samir K. Saha, Andrian Kuchuk, Fernando Maia de Oliveira, Krista R. Khiangte, Shui-Qing Yu, Yuriy I. Mazur, and Gregory J. Salamo, “Improving the Material Quality of GaAs Grown on the c-Plane Sapphire by Molecular Beam Epitaxy to Achieve Room-Temperature Photoluminescence“, Crystal Growth & Design 2023 23 (10), 7385-7393
143 Calbi Gunder, Mohammad Zamani Alavijeh, Emmanuel Wangila, Fernando Maia de Oliveira, Aida Sheibani, Serhii Kryvyi, Paul C. Attwood, Yuriy I. Mazur, Shui-Qing Yu, Gregory J. Salamo, “Algorithm based linearly graded compositions of GeSn on GaAs (001) via molecular beam epitaxy“, Materials Science (cond-mat.mtrl-sci); Applied Physics (physics.app-ph).
142 Hryhorii Stanchu“Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers”. J. Vac. Sci. Technol. B 1 September 2023; 41 (5): 052208. Abdulla Said Oluwatobi Olorunsola Sudip Acharya Sylvester Amoah Mohammad Zamani-Alavijeh Fernando M. de Oliveira Santosh Karki Chhetri Jin Hu Yuriy I. Mazur Shui-Qing Yu Gregory Salamo;
141 Chang, G.-E.; Yu, S.-Q.; Sun, G. “GeSn Rule-23”—The Performance Limit of GeSn Infrared Photodiodes. Sensors2023, 23, 7386.
140 Serhiy Kondratenko, Oleksandr Datsenko, Andrian V. Kuchuk, Fernando M. de Oliveira, Danylo Babich, Peter M. Lytvyn, Morgan E. Ware, Volodymyr Lysenko, Shui-Qing Yu, Yuriy I. Mazur, and Gregory J. Salamo “Photoconductivity of GeSn thin films with up to 15% Sn content”, Phys. Rev. Materials 7, 074604 – Published 14 July 2023
139 Petro Lytvyn“Strain-driven anomalous elastic properties of GeSn thin films”. Appl. Phys. Lett. 10 July 2023; 123 (2): 022102. Andrian Kuchuk Serhiy Kondratenko Hryhorii Stanchu Sergii V. Malyuta Shui-Qing Yu Yuriy I. Mazur Gregory J. Salamo;
138 Dhammapriy Gayakwad, Dushyant Singh, Rahul Kumar, Yuriy I. Mazur, Shui-Qing Yu, Gregory J. Salamo, S. Mahapatra, Krista R. Khiangte, “Epitaxial growth of Ge1-xSnx on c – Plane sapphire substrate by molecular beam epitaxy”, Journal of Crystal Growth, Volume 618, 2023, 127306, ISSN 0022-0248.
137 G. Sun, R. Soref, J. Khurgin, S. Yu, and G. Chang, “Design of L-Valley Ge/GeSiSn Waveguide Quantum Cascade Detector,” in CLEO 2023, Technical Digest Series (Optica Publishing Group, 2023), paper JW2A.119.
136
135 Grey Abernathy, Solomon Ojo, Hryhorii Stanchu, Yiyin Zhou, Oluwatobi Olorunsola, Joshua Grant, Wei Du, Yue-Tong Jheng, Guo-En Chang, Baohua Li, and Shui-Qing Yu, “Investigation of the cap layer for improved GeSn multiple quantum well laser performance,” Opt. Lett. 48, 1626-1629 (2023)
134 Solomon Ojo, Hryhorii Stanchu, Sudip Acharya, Abdulla Said, Sylvester Amoah, Mourad Benamara, Chen Li, Fernando M. de Oliveira, Yuriy I. Mazur, Shui-Qing Yu, Gregory Salamo, “Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells“, Journal of Crystal Growth,Volume 605, 2023.
132. Oluwatobi Olorunsola, Hryhorii Stanchu, Solomon Ojo, Emmanuel Wangila, Abdulla Said, Mohammad Alavijeh, Gregory Salamo, and Shui-Qing Yu, “Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics, Submitted to Materials Characterization“, Journal of Crystal Growth, 2022.
131. Oluwatobi Olorunsola, Abdulla Said, Solomon Ojo, Grey Abernathy, Samir Saha, Emmanuel Wangila, Joshua Grant, Hryhorii Stanchu, Sudip Acharya, Wei Du, Yue-Tong Jheng, Guo-En Chang, Baohua Li, Gregory Salamo, and Shui-Qing Yu, “Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications“, Applied Physics Letter, 2022.
130. Emmanuel Wanglia, Samir K. Saha, Rahul Kumar, Andrian Kuchuk, Calbi Gunder, Sylvester Amoah, Krista R. Khiangte, Zhong Cheng, Shui-Qing Yu, Gregory J. Salamo, “Single crystalline Ge thin film growth on c-plane sapphire substrates by molecular beam epitaxy (MBE)“, CrystEngComm, 2022.
129. Andrian Kuchuk, Petro Lytvyn, Yuriy Mazur, Hryhorii Stanchu, Serhiy Kondratenko, Fernando Maia de Oliveira, Marcio Teodoro, Serhiy Malyuta, Mourad Benamara, Shui-Qing Yu, Gregory Salamo, “Sn-guided Self-Grown Ge Stripes Banded by GeSn Nanowires: Formation Mechanism and Carrier Redistribution at Nanoscale”, Nano Research, 2022.
128. Pengyu Lai, David Gonzalez, Syam Madhusoodhanan, Abbas Sabbar, Salahaldein Ahmed, Bingzhang Dong, Jiangbo Wang, Alan Mantooth, Shui-Qing Yu, and Zhong Chen, Design, “Development of LTCC-packaged Optocouplers as Optical Galvanic Isolation for High-Temperature Applications“, Scientific Report, 2022.
127. Syam Madhusoodhanan, Abbas Sabbar, Huong Tran, David Gonzalez, Stanley Atcitty, Robert Kaplar, Alan Mantooth, Shui-Qing Yu, and Zhong Chen, “High-Temperature Analysis of Optical Coupling Using AlGaAs LEDs for High-Density Integrated Power Modules“, Scientific Reports 12(3168):1-7 (2022).
126. Abbas Sabbar, Syam Madhusoodhanan, Huong Tran, Bingzhang Dong, Jiangbo Wang, Alan Mantooth, Shui-Qing Yu, and Zhong Chen, “Design and Optimization of High-Temperature Optocouplers as Galvanic Isolation“, Scientific Reports, 12, 2228 (2022).
125 .Yiyin Zhou, Solomon Ojo, Chen-Wei Wu, Yuanhao Miao, Huong Tran, Joshua M. Grant, Grey Abernathy, Sylvester Amoah, Jake Bass, Gregory Salamo, Wei Du, Guo-En Chang, Jifeng Liu, Joe Margetis, John Tolle, Yong-Hang Zhang, Greg Sun, Richard A. Soref, Baohua Li, and Shui-Qing Yu, “Electrically injected GeSn lasers with peak wavelength up to 2.7 μm“, Photon. Res. 10, 222-229 (2022). Highlighted on the journal cover page.
124 Joshua Grant, Grey Abernathy, Oluwatobi Olorunsola, Solomon Ojo, Sylvester Amoah, Emmanuel Wanglia, Samir Sah, Abbas Sabbar, Wei Du, Murtadha Alher, Baohua Li, and Shui-Qing Yu, “Growth of pseudomorphic GeSn at low pressure with Sn composition up to 16.7 %“, Materials 2021, 14(24), 7637; https://doi.org/10.3390/ma14247637.
123 Tyler McCarthy, Zheng Ju, Stephen Schaefer, Shui-Qing Yu, and Yong-Hang Zhang, “Momentum(k)-Space Carrier Separation Using SiGeSn Alloys for Photodetector Applications“, J. Appl. Phys. 130, 223102 (2021); https://doi.org/10.1063/5.0063179.
122 Oluwatobi Olorunsola, Solomon Ojo,Grey Abernathy, Yiyin Zhou, Sylvester Amoah, P.C. Grant, Wei Dou, Joe Margetis, John Tolle, Andrian Kuchuk, Wei Du, Baohua Li, Yong-Hang Zhang, and Shui-Qing Yu, “Investigation of SiGeSn/GeSn Single Quantum Well with Enhanced Well Emission“, Nanotechnology 33 085201 (2022).
121 S. V. Kondratenko, P. M. Lytvyn, A. V. Kuchuk, F. M. de Oliveira, H. Stanchu, V.S. Lysenko, M. D. Teodoro, S. V. Malyuta, S.-Q. Yu, Yu. I. Mazur and G. J. Salamo, “Conductivity type conversion in self-assembled GeSn stripes on Ge/Si(100) under electric field“, ACS Appl. Electron. Mater. 2021, XXXX, XXX, XXX-XXX, Publication Date: September 30, 2021, https://doi.org/10.1021/acsaelm.1c00561.
120 Jake Bass, Huong Tran, Wei Du, Richard Soref, and Shui-Qing Yu, “The impact of nonlinear effects in Si towards integrated microwave-photonic applications“, Optics Express 29 (19), 30844-30856.
119 Oluwatobi Olorunsola, Hryhorii Stanchu, Solomon Ojo, Krishna Pandey, Abdulla Said, Joe Margetis, John Tolle, Andrian Kuchuk, Yuriy I Mazur, Gregory Salamo, Shui-Qing Yu, “Impact of Long-Term Annealing on Photoluminescence from Ge1-xSnx Alloys“, Crystals 2021, 11, 905.
118 Oussama Moutanabbir, Simone Assali, Xiao Gong, Eoin O’Reilly, Chris Broderick, Bahareh Marzban, Jeremy Witzens, Wei Du, Shui-Qing Yu, Alexei Chelnokov, Dan Buca, Donguk Nam, “Monolithic Infrared Silicon Photonics: The Rise of (Si)GeSn Semiconductors“, Appl. Phys. Lett. 118, 110502, 2021. arXiv preprint arXiv:2101.03245
117 Guo-En Chang, Shui-Qing Yu, Yong-Hang Zhang, Jifeng Liu, H. H. Cheng, Richard A. Soref, and Greg Sun, “Achievable Performance of Uncooled Homojunction GeSn Mid-infrared Photodetectors“, IEEE Journal of Selected Topics in Quantum Electronics On page(s): 0 Print ISSN: 1077-260X Online ISSN: 1558-4542 Digital Object Identifier: 10.1109/JSTQE.2021.3065204.
116 Grey Abernathy, Yiyin Zhou, Solomon Ojo, Bader Alharthi, Perry C. Grant, Wei Du, Joe Margetis, John Tolle, Andrian Kuchuk, Baohua Li, and Shui-Qing Yu, “Study of SiGeSn/GeSn single quantum well towards high-performance all-group-IV optoelectronics“, Journal of Applied Physics 129 (9), 093105, arXiv:2009.12254 [physics.app-ph]
115 Hryhorii V. Stanchu, Andrian V. Kuchuk, Yuriy I. Mazur, Krishna Pandey, Fernando M. de Oliveira, Mourad Benamara, Marcio D. Teodoro, Shui-Qing Yu, and Gregory J. Salamo, “Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers“, Crystal Growth & Design, 2021, 21, 3, 1666–1673, https://doi.org/10.1021/acs.cgd.0c01525.
114 R. Kumar, Samir K. Saha, Andrian Kuchuk, Yurii Maidaniuk, Yuriy I. Mazur, Shui-Qing Yu, G. J. Salamo, “GaAs Layer on c-plane Sapphire for Light Emitting Sources“, Applied Surface Science, Volume 542, 148554 (2021), https://doi.org/10.1016/j.apsusc.2020.148554.
112 Samir K. Saha, Rahul Kumar, Andrian Kuchuk, Hryhorii Stanchu, Yuriy Mazur, Shui-Qing Yu, Gregory J. Salamo, GaAs Thin Film Growth on R-Plane Sapphire Substrate, Journal of Crystal Growth 548 (2020) 125848, https://doi.org/10.1016/j.jcrysgro.2020.125848.
111 Hryhorii V. Stanchu, Andrian V. Kuchuk, Yuriy I. Mazur, Joe Margetis, John Tolle, Shui-Qing Yu, and Gregory J. Salamo, Strain suppressed Sn incorporation in epitaxial GeSn/Ge/Si(001) heterostructures, Appl. Phys. Lett. 116, 232101 (2020); https://doi.org/10.1063/5.0011842.
110 Seyedeh Fahimeh Banihashemian, J. M. Grant, Abbas Sabbar, Huong Tran, Oluwatobi Olorunsola, Solomon Ojo, Sylvester Amoah, Mehrshad Mehboudi, Shui-Qing Yu, Aboozar Mosleh, and Hameed A. Naseem, Growth and Characterization of Low-Temperature Si1-xSnx on Si using Plasma Enhanced Chemical Vapor Deposition System, Opt. Mater. Express 10(9), 2242-2253 (2020), https://doi.org/10.1364/OME.398958.
109 Yiyin Zhou, Yuanhao Miao, Solomon Ojo, Huong Tran, Grey Abernathy, Joshua M. Grant, Sylvester Amoah, Gregory Salamo, Wei Du, Jifeng Liu, Joe Margetis, John Tolle, Yong-Hang Zhang, Greg Sun, Richard A. Soref, Baohua Li, and Shui-Qing Yu, Electrically injected GeSn lasers on Si operating up to 100 K, Optica 7, 924-928 (2020), https://doi.org/10.1364/OPTICA.395687, https://arxiv.org/abs/2004.09402. This work was reported by many media world widely. Search article “Materials Science Reserchers Develop First Electrically Injected Laser” for the report. Selected media list is given in below:
108 Syam Madhusoodhanan, Abbas Sabbar, Huong Tran, Binzhong Dong, Jiangbo Wang, Alan Mantooth, Shui-Qing Yu, and Zhong Chen, High-Temperature Analysis of GaN-based MQW Photodetector for Optical Galvanic Isolations in High-Density Integrated Power Modules, IEEE Journal of Emerging and Selected Topics in Power Electronics, DOI: 10.1109/JESTPE.2020.2974788.
107 H. V. Stanchu, A. V. Kuchuk, Yu. I. Mazur, J. Margetis, J. Richter, S.-Q. Yu, and G. J. Salamo, X-ray diffraction study of strain relaxation, spontaneous compositional gradient, and dislocation density in GeSn/Ge/Si(100) heterostructures, Semiconductor Science and Technology, 35 (2020) 075009, https://doi.org/10.1088/1361-6641/ab883c.
106 Abbas Sabbar, Syam Madhusoodhanan, Binzhong Dong, Jiangbo Wang, Stanley Atcitty, Robert Kaplar, Alan Mantooth, Shui-Qing Yu, and Zhong Chen, High-Temperature Spontaneous Emission Quantum Efficiency Analysis of Different InGaN MQW for Future Power Electronics Applications, IEEE Journal of Emerging and Selected Topics in Power Electronics, DOI: 10.1109/JESTPE.2020.2995120.
105 Abbas Sabbar, J. M. Grant, P.C. Grant, W. Dou, Bauhoa Li, Fatma Yurtsever, Seyed Amir Ghetmiri, Hameed A. Naseem, Shui-Qing Yu, Aboozar Mosleh, and Zhong Chen, Growth and Characterization of SiGe on c-Plane Sapphire Using Chemical Vapor Deposition System, Journal of Electronic Materials, 49(8), 4809-4815, https://doi.org/10.1007/s11664-020-08169-9
103 H. Tran, C. G. Littlejohns, D. J. Thomson, T. Pham, S. A. Ghetmiri, A. Mosleh, J. Margetis, J. Tolle, G. Z. Mashanovich, W. Du, B. Li, M. Mortazavi, and S.-Q. Yu, High speed GeSn photodetectors towards mid-infrared microwave photonics, Frontiers in Materials, Vol. 6, Article 278 (2019), https://www.frontiersin.org/article/10.3389/fmats.2019.00278.
102 Syam Madhusoodhanan, Abbas Sabbar, Sattar Al-Kabi, Stanley Atcitty, Robert Kaplar, Alan Mantooth, Shui-Qing Yu, and Zhong Chen, Investigation of high temperature internal quantum efficiency of GaN based blue LED for high density power electronic modules, IEEE Journal of Emerging and Selected Topics in Power Electronics, DOI: 10.1109/JESTPE.2019.2945166
101 Abbas Sabbar, Syam Madhusoodhanan, Sattar Al-Kabi, Binzhong Dong, Jiangbo Wang, Stanley Atcitty, Robert Kaplar, Ding Ding, Alan Mantooth, Shui-Qing Yu, and Zhong Chen, High Temperature and Power Dependent Photoluminescence Analysis on Commercial Display and Lighting LED Materials, Scientific Report (Nature Publisher Group), 9:16758 (2019), https://doi.org/10.1038/s41598-019-52126-4.
100 Wei Du, Quang M. Thai, Jeremie Chrétien, Mathieu Bertrand, Lara Casiez, Yiyin Zhou, Joe Margetis, Nicolas Pauc, Alexei Chelnokov, Vincent Reboud, Vincent Calvo, John Tolle, Baohua Li and Shui-Qing Yu, Study of Si-based GeSn optically pumped lasers with micro-disk and ridge waveguide structures, Front. Phys. 7:147., doi: 10.3389/fphy.2019.00147.
99 Samir K. Saha, Rahul Kumar, Andrian Kuchuk, Mohammad Z. Alavijeh, Yurii Maidaniuk, Yuriy I. Mazur, Shui-Qing Yu, Gregory J. Salamo, Crystalline GaAs thin film growth on c-plane sapphire substrate, Cryst. Growth Des. 2019, 19, 5088−5096.
98 Huong Tran, Thach Pham, Joe Margetis, Yiyin Zhou, Wei Dou, Perry C. Grant, Joshua M. Grant, Sattar Alkabi, Wei Du, Greg Sun, Richard A. Soref, John Tolle, Baohua Li, Mansour Mortazavi, and Shui-Qing Yu, Si-based GeSn photodetectors towards mid-infrared imaging applications, ACS Photonics 2019, DOI: 10.1021/acsphotonics.9b00845.
97 T. D. Eales, I. P. Marko, S. Schulz, E. O’Halloran, S. A. Ghetmiri, W. Du, Y. Zhou, S.Q. Yu, J. Margetis, J. Tolle, E. P. O’Reilly, and S. J. Sweeney, Ge1−xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration, Scientific Reports (2019) 9:14077, https://doi.org/10.1038/s41598-019-50349-z.
96 Perry C. Grant, Wei Dou, Bader Alharthi, Joshua M. Grant, Huong Tran, Grey Abernathy, Aboozar Mosleh, Wei Du, Baohua Li, Mansour Mortazavi, Hameed A. Naseem, Shui-Qing Yu, UHV-CVD Growth of High Quality GeSn Using SnCl4: From Growth Optimization to Prototype Devices, Optical Materials Express, Vol. 9, No. 8 pp 3277-3291(2019). https://doi.org/10.1364/OME.9.003277 Selected as the editor’s pick.
95 Yiyin Zhou, Wei Dou, Wei Du, Solomon Ojo, Huong Tran, Seyed A. Ghetmiri, Jifeng Liu, Greg Sun, Richard Soref, Joe Margetis, John Tolle, Baohua Li, Zhong Chen, Mansour Mortazavi, Shui-Qing Yu, Si-based GeSn lasers with ridge and planar waveguide structures and operating temperatures up to 270 K, ACS Photonics (2019), DOI: 10.1021/acsphotonics.9b00030. This work was highlighted by the following media (see the link in below).
https://phys.org/news/2019-06-semiconductor-laser-silicon.html
https://parallelstate.com/news/researchers-improve-semiconductor-laser-on-silicon/137969
https://nationnews.com.au/researchers-improve-semiconductor-laser-on-silicon/
https://macaway.com/how-researchers-improve-semiconductor-laser-on-silicon/
http://mikedyess.info/para/researchers-improve-semiconductor-laser-on-silicon/
https://spotonarkansas.com/ar-colleges/148495/researchers-improve-semiconductor-laser.html
94 S.V. Kondratenko, Yu. V. Hyrka, Yu. I. Mazur, A.V. Kuchuk, Wei Dou, Huong Tran, Joe Margetis, John Tolle, Wei Du, Shui-Qing Yu, and G. J. Salamo, Photovoltage spectroscopy of direct and indirect bandgaps of strained Ge1-xSnx thin films on Ge/Si(001) substrate, Acta Materialia, Volume 171, 1 June 2019, Pages 40-47, https://doi.org/10.1016/j.actamat.2019.04.004.
93 Bader Alharthi, Wei Dou, Perry C. Grant, Joshua M. Grant, Timothy Morgan, Aboozar Mosleh, Wei Du, Baohua Li, Mansour Mortazavi, Hameed Naseem, and Shui-Qing Yu, Growth of High Quality Ge Buffer using Plasma Enhancement via UHV-CVD System for Photonic Devices Applications, Applied Surface Science (Available online 8 March 2019), https://doi.org/10.1016/j.apsusc.2019.03.062.
92 Syam Madhusoodhanan, Abbas Sabbar, Sattar Al-Kabi, Stanley Atcitty, Robert Kaplar, Binzhong Dong, Jiangbo Wang, Shui-Qing Yu, Zhong Chen, High Temperature Optical Characterization of Wide Band Gap Light Emitting Diodes and Photodiodes for Future Power Module Application, Adv. Sci. Technol. Eng. Syst. J. 4(2), 17-22 (2019); DOI: 10.25046/aj040203.
91 Joe Margetis, Shui-Qing Yu, Baohua Li, and John Tolle, The Chemistry and Kinetics Governing Hydride/Chloride CVD Growth of Epitaxial Ge1-xSnx, Journal of Vacuum Science & Technology A 37, 021508 (2019); https://doi.org/10.1116/1.5055620.
89 Abbas Sabbar, Syam Madhusoodhanan, Sattar Al-Kabi, Binzhong Dong, Jiangbo Wang, Stanley Atcitty, Robert Kaplar, Ding Ding, Alan Mantooth, Shui-Qing Yu, and Zhong Chen, Systematic Investigation of Spontaneous Emission Quantum Efficiency Drop up to 800K for Future Power Electronics Applications, IEEE Journal of Emerging and Selected Topics in Power Electronics (2018). https://doi.org/10.1109/JESTPE.2018.2882775
88 Wei Dou, Bader Alharthi, Perry C. Grant, Joshua M. Grant, Aboozar Mosleh, Huong Tran, Wei Du, Mansour Mortazavi, Baohua Li, Hameed Naseem, and Shui-Qing Yu, “Crystalline GeSn growth by plasma enhanced chemical vapor deposition,” Opt. Mater. Express 8, 3220-3229 (2018). Selected as the editor’s pick.
87 Perry C Grant, Joe Margetis, Wei Du, Yiyin Zhou, Wei Dou, Grey Abernathy, Andrian Kuchuk, Baohua Li, John Tolle, Jifeng Liu, Greg Sun, Richard A Soref, Mansour Mortazavi and Shui-Qing Yu, “Study of direct bandgap type-I GeSn/GeSn double quantum well with improved carrier confinement” Nanotechnology 29, 4652 (2018)
86 Wei Dou, Yiyin Zhou, Joe Margetis, Seyed Amir Ghetmiri, Sattar Al-Kabi, Wei Du, Jifeng Liu, Greg Sun, Richard A. Soref, John Tolle, Baohua Li, Mansour Mortazavi, and Shui-Qing Yu, “Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 22.3%,” Opt. Lett. 43, 4558-4561 (2018)
85 Perry C. Grant, Joe Margetis, Yiyin Zhou, Wei Dou, Grey Abernathy, Wei Du, Baohua Li, John Tolle, Jifeng Liu, Greg Sun, Richard A. Soref, Mansour Mortazavi, Shui-Qing Yu, Direct Bandgap Type-I GeSn/GeSn Quantum Well on Si substrate, AIP Advances 8, 025104 (2018), Selected as the editor’s pick.
84 Huong Tran, Thach Pham, Wei Du, Yang Zhang, Perry C. Grant, Josh M. Grant, Greg sun, Richard A. Soref, Joe Margetis, John Tolle, Baohua Li, Mansour Mortazavi, and Shui-Qing Yu, High performance Ge0.89Sn0.11 photodiode for low-cost shortwave infrared imaging, Journal of Applied Physics 124, 013101 (2018); doi: 10.1063/1.5020510.
83 Yang Zhang, Yang Wu, Xiaoxin Wang, Lei Ying, Rahul Kumar, Zongfu Yu, Eric R. Fossum, Jifeng Liu, Gregory Salamo, and Shui-Qing Yu, Detecting Single Photons Using Capacitive Coupling of Single Quantum Dots with Sub-Picosecond Intrinsic Timing Jitter, ACS Photonics 5 (5), 2008-2021.
82 Eesha Andharia, Thaneshwor P. Kaloni, Gregory J. Salamo, Shui-Qing Yu, Hugh O. H. Churchill, and Salvador Barraza-Lopez, Exfoliation energy, quasiparticle band structure, and excitonic properties of selenium and tellurium atomic chains, PHYSICAL REVIEW B 98, 035420 (2018).
81 Bader Alharthi, Joshua M. Grant, Wei Dou, Perry C. Grant, Aboozar Mosleh, Wei Du, Mansour Mortazavi, Baohua Li, Hameed Naseem, and Shui-Qing Yu, Heteroepitaxial Germanium-on-Silicon Using RF Plasma Enhancement for Ultra-High Vacuum Chemical Vapor Deposition, Journal of Electronic Materials (2018), doi.org/10.1007/s11664-018-6315-5.
80 Hakimah Alahmad, Aboozar Mosleh, Murtadha Alher, Seyedeh Fahimeh Banihashemian, Seyed Amir Ghetmiri, Sattar Al-Kabi, Wei Du, Baohua Li, Shui-Qing Yu, Hameed A. Naseem, Growth and characterization of GePb Alloy using layer inversion method, Journal of Electronic Materials 47 (7), 3733-3740.
79 Wei Dou, Mourad Benamara, Aboozar Mosleh, Joe Margetis, Perry Grant, Yiyin Zhou, Sattar Al-Kabi, Wei Du, John Tolle, Baohua Li, Mansour Mortazavi, Shui-Qing Yu, Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth, Scientific Reports (Nature Publisher Group) vol. 8, pp. 1-11, 2018.
78 Joe Margetis, Sattar Al-Kabi, Wei Du, Wei Dou, Yiyin Zhou, Thach Pham, Perry Grant, Seyed Ghetmiri, Aboozar Mosleh, Baohua Li, Jifeng Liu, Greg Sun, Richard Soref, John Tolle, Mansour Mortazavi, Shui-Qing Yu, Si-based GeSn lasers with wavelength coverage of 2 to 3 μm and operating temperatures up to 180 K, ACS Photonics, ACS Photonics, 2018, 5 (3), pp 827–833, DOI: 10.1021/acsphotonics.7b00938, arXiv:1708.05927. This work was highlighted by the following media (see the link in below).
https://phys.org/news/2018-02-pptically-laser-closer-sensors.html
http://www.physnews.com/nano-physics-news/cluster1768865394/
http://www.newswise.com/articles/view/689280/?sc=rssn
https://www.azooptics.com/News.aspx?newsID=2370
76 Joe Margetis, Nupur Bhargava, Wei Du, Shui-Qing Yu, Baohua Li, and John Tolle, Strain Engineering in Epitaxial GexSn1-x: a Path to Low-defect high Sn-content Layers, Semiconductor Science and Technology, In press. https://doi.org/10.1088/1361-6641/aa7fc7
75 Yang Zhang, Yang Wu, Xiaoxin Wang, Eric R. Fossum, Rahul Kumar, Jifeng Liu, Gregory Salamo, and Shui-Qing Yu, Non-avalanche single photon detection without carrier transit-time delay through quantum capacitive coupling, Optics Express Vol. 25, Issue 22, pp. 26508-26518 (2017)
74 Bader Alharthi, Joe Margetis, Huong Tran, Sattar Al-kabi, Wei Dou, Seyed Amir Ghetmiri, Aboozar Mosleh, John Tolle, Wei Du, Mansour Mortazavi, Baohua Li, Hameed Naseem, and Shui-Qing Yu, Study of material and optical properties of SixGe1-x-y Sny alloys for Si-based optoelectronic device applications, Optical Materials Express, Vol. 7, Issue 10, pp. 3517-3528 (2017).
73 Hugh O. H. Churchill, Gregory J. Salamo, Shui-Qing Yu, Takayuki Hironaka, Xian Hu, Jeb Stacy, Ishiang Shih, Toward Single Atom Chains with Exfoliated Tellurium, Nanoscale Research Letters (2017) 12:488, DOI 10.1186/s11671-017-2255-x.
72 Wei Du, Seyed Amir Ghetmiri, Joe Margetis, Sattar Al-Kabi, Yiyin Zhou, Jifeng Liu, Greg Sun, Richard A. Soref, John Tolle, Baohua Li, Mansour Mortazavi, and Shui-Qing Yu, Investigation of optical transitions in a SiGeSn/GeSn/SiGeSn single quantum well structure, Journal of Applied Physics 122, 123102 (2017); doi: 10.1063/1.4986341.
71 Yu. I. Mazur, Sergei Kurlov, Gregory Salamo, Martin Schmidbauer, Shui-Qing Yu, Gilmar Marques, Leonardo Dias, Vitally Dorogan, Dongsheng Fan, Zoriana Zhuchenko, georgiy tarasov, Morgan Ware, Luminescent properties of GaAsBi /GaAs double quantum well structures, Journal of Luminescence, 188 (2017) 209–216.
70 J. Margetis, A. Mosleh, S. Al-Kabi, S. Ghetmiri, W. Du, W. Dou, M. Benamara, B. Li, M. Mortazavi, H. Naseem, S.-Q. Yu and J. Tolle, Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD for mid-infrared applications, Journal of Crystal Growth, 463 (2017) 128–133.
69 Seyed A. Ghetmiri, Yiyin Zhou, Joe Margetis, Sattar Al-Kabi, Wei Dou, Aboozar Mosleh, Wei Du, Andrian Kuchuk, Jifeng Liu, Greg Sun, Richard A. Soref, John Tolle, Hameed A. Naseem, Baohua LI, Mansour Mortazavi, and Shui-Qing Yu, Study of SiGeSn/GeSn/SiGeSn structure towards direct bandgap type-I quantum well for all group-IV-optoelectronics, Optics Letters, Vol. 42, No. 3 (2017), pp 387- 390.
67 Sattar Al-Kabi, Seyed Ghetmiri, Joe Margetis, Thach Pham, Yiyin Zhou, Bria Collier, Randy Quinde, Wei Du, Aboozar Mosleh, Jifeng Liu, Greg Sun, Richard Soref, John Tolle, Baohua Li, Mansour Mortazavi, Hameed Naseem, and Shui-Qing Yu, An optically pumped 2.5 µm GeSn laser on Si operating at 110 K, Applied Physics Letters 109, 171105 (2016); doi: 10.1063/1.4966141. This work was highlighted by the following media (see the link in below).
https://www.sciencedaily.com/releases/2017/02/170207110239.htm
http://esciencenews.com/sources/newswise.scinews/2017/02/07/germanium.tin.laser.could.increase.processing.speed.computer.chips
http://www.hitechdays.com/news/166494/germanium-tin-laser-could-increase-processing-speed-of-computer-chips/
http://www.novuslight.com/silicon-photonics-germanium-tin-laser-promises-faster-chips_N6609.html
66 Sattar Al-Kabi, Seyed Ghetmiri, Joe Margetis, Wei Du, Aboozar Mosleh, Wei Dou, Greg Sun, Richard Soref, John Tolle, Baohua Li, Mansour Mortazavi, Hameed Naseem, Shui-Qing Yu, Study of High Quality GeSn Alloys Grown by Chemical Vapor Deposition towards Mid-Infrared Applications, Journal of Electronic Materials (2016), 10.1007/s11664-016-5028-x.
65 Wei Dou, Seyed Ghetmiri, Sattar Al-Kabi, Aboozar Mosleh, Yiyin Zhou, Bader Alharthi, Wei Du, Joe Margetis, John Tolle, Andrian Kuchuk, Mourad Benamara, Baohua Li, Hameed Naseem, Mansour Mortazavi, and Shui-Qing Yu, Structural and Optical Characteristics of GeSn Quantum Wells for Silicon-Based Mid-Infrared Optoelectronic Applications, Journal of Electronic Materials (2016), 10.1007/s11664-016-5031-2.
64 W. Du, S. Al-Kabi, S. Ghetmiri, H. Tran, T. Pham, B. Alharthi, A. Mosleh, J. Margetis, J. Tolle, H. Naseem, M. Mortazavi, G. Sun, R. Soref, B. Li, and S. -Q. Yu, Development of SiGeSn Technique towards Mid-Infrared Devices in Silicon Photonics, ECS Transactions, 75 (8) 231-239 (2016).
63 Yiyin Zhou, Wei Dou, Wei Du, Thach Pham, Seyed Amir Ghetmiri, Sattar Al-Kabi, Aboozar Mosleh, Joe Margetis, John Tolle, Greg Sun, Richard Soref, Baohua Li, Mansour Mortazavi, Hameed Naseem, and Shui-Qing Yu, Systematic study of Si-based GeSn light-emitting diodes towards mid-infrared applications, Journal of Applied Physics 120, 023102 (2016)
62 J. A. Steele, R. A. Lewis, J. Horvat, M. J. B. Nancarrow, M. Henini, D. Fan, Y. I. Mazur, M. E. Ware, S.-Q. Yu, and G. J. Salamo, Surface effects of vapor – liquid – solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi, Scientific Reports,6:28860 (2016)
61 A. Mosleh, M. Alher, L. C. Cousar, W. Du, S. A. Ghetmiri, S. Al-Kabi, W. Dou, P. C. Grant, G. Sun, R. A. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, Buffer-free GeSn and SiGeSn growth on Si substrate using in-situ SnD4 gas mixing, J. Electron. Mater., April 2016, Volume 45, Issue 4, pp 2051-2058.
60 T. Pham, W. Du, H. Tran, J. Margetis, J. Tolle, G. Sun, R. A. Soref, H. A. Naseem, B. Li, and S.-Q. Yu, Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection, Opt. Express, Vol. 24, Issue 5, pp. 4519-4531 (2016), doi: 10.1364/OE.24.004519.
59 Huong Tran, Wei Du, Seyed A. Ghetmiri, Aboozar Mosleh, Greg Sun, Richard A. Soref, Joe Margetis, John Tolle, Baohua Li, Hameed A. Naseem, and Shui-Qing Yu, Systematic Study of Ge1-xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics, Journal of Applied Physics 119, 103106 (2016); doi: 10.1063/1.4943652
58 R. Soref, D. Buca and S.-Q. Yu, Group IV Photonics: Driving Integrated Optoelectronics, Invited Article, Opt. Photonics News, Vol. 27, Issue 1, pp. 32-39 (2016). doi: 10.1364/OPN.27.1.000032
57 A. Mosleh, M. Alher, W. Du, L. C. Cousar, S. A. Ghetmiri, S. Al-Kabi, W. Dou, P. C. Grant, G. Sun, R. A. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system, J. Vac. Sci. Technol. B, 34, 011201 (2016). Selected as the editor’s pick and the most read paper in the month.
55 A. Mosleh, M. Alher, L. Cousar, H. Abu-safe, W. Dou, P. C. Grant, S. Al- Kabi, S. A. Ghetmiri, B. Alharthi, H. Tran, W. Du, M. Benamara, B. Li, M. Mortazavi, S.-Q. Yu, and H. Naseem, Enhancement of Material Quality of (Si)GeSn Films Grown By SnCl4 Precursor, ECS Transactions, 69 (5) 279-286 (2015).
54 M. Alher, A. Mosleh, L. Cousar, W. Dou, P. C. Grant, S. A. Ghetmiri, S. Al-Kabi, W. Du, M. Benamara, B. Li, M. Mortazavi, S.-Q. Yu, and H. A. Naseem, CMOS Compatible Growth of High-Quality Ge, SiGe and SiGeSn for Photonic Device Applications, ECS Transactions, 69 (5) 269-278 (2015).
53 S. Al-Kabi, S. A. Ghetmiri, J. Margetis, W. Du, A.r Mosleh, M. Alher, W. Dou, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, Optical characterization of Si-based Ge1-xSnx alloys with Sn compositions up to 12%, J. Electron. Mater., 1-9, DOI: 10.1007/s11664-015-4283-6 (2015). Selected as editor’s pick.
52 T. N. Pham, W. Du, B. R. Conley, J. Margetis, G. Sun, R. A. Soref, J. Tolle, B. Li and S. -Q. Yu, Si-based Ge0.9Sn0.1 photodetector with a peak responsivity of 2.85 A/W and a longwave cutoff at 2.4 μm, Electronics Letters, 51, 854 (2015).
51 Aboozar Mosleh, Murtadha Alher, Larry C. Cousar, Wei Du, Seyed Amir Ghetmiri, Tach Pham, Benjamin R. Conley, Joshua M. Grant, Greg Sun, Richard A. Soref, Baohua Li, Hameed. A. Naseem, and Shui-Qing Yu, Direct growth of Ge1-xSnx films on Si using a cold-wall ultra-high-vacuum chemical-vapor-deposition system, Frontiers in Materials, vol. 2, pp. 30 (2015). Highlighted by the editor.
49 Joe Margetis, Seyed Amir Ghetmiri, Wei Du, Benjamin R. Conley, Aboozar Mosleh, Richard A. Soref, Greg Sun, Lucas Domulevicz, Hameed A. Naseem, Shui-Qing Yu, and John Tolle, Growth and characterization of Ge1-xSnx alloys deposited using a commercial CVD system, ECS Transactions, 64 (6) 711-720 (2014).
48 A. Mosleh, M. Benamara, S.A. Ghetmiri, B. Conley, W. Du, J. Tolle, S.-Q. Yu, H. Naseem, Investigation of defect formation and propagation in GeSn thin films, ECS Transactions, 64 (6) 895-901 (2014).
47 B. R. Conley, A. Mosleh, S. A. Ghetmiri, G. Sun, R. Soref, J. Tolle, H. A. Naseem, S.-Q. Yu, Stability of Pseudomorphic and Compressively Strained Ge1-xSnx Thin Films under Rapid Thermal Annealing, ECS Transactions, 64 (6) 881-893 (2014).
46 Aboozar Mosleh, Hameed A. Naseem, Zafar Waqar, Shui-Qing Yu, Husam Abu-Safe, Seyed Amir Ghetmiri, Benjamin R. Conley, Mourad Benamara, Investigation of Growth Mechanism and Role of H2 in Very Low Temperature Si Epitaxy, ECS Transactions, 64 (6) 967-975 (2014).
45 Seyed Amir Ghetmiri, Wei Du, Joe Margetis, Aboozar Mosleh, Larry Cousar, Benjamin R. Conley, Lucas Domulevicz, Amjad Nazzal, Greg Sun, Richard A. Soref, John Tolle, Baohua Li, Hameed A. Naseem, and Shui-Qing Yu, Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence, Appl. Phys. Lett., Vol. 105, Issue 15, pp. 151109 (2014).
44 Seyed Amir Ghetmiri, Wei Du, Benjamin R. Conley, Aboozar Mosleh, Amjad Nazzal, Richard A. Soref, Greg Sun, Joe Margetis, John Tolle, Hameed A. Naseem, and Shui-Qing Yu, Near and mid-infrared photoluminescence from Ge1-xSnx thin films on Si substrates, JVST B, 32, 060601 (2014). This paper was selected as the Featured Letters by JVST B on 12/16/2014.
43 Wei Du, Seyed A. Ghetmiri, Benjamin R. Conley, Aboozar Mosleh, Amjad Nazzal, Richard A. Soref, Greg Sun, John Tolle, Joe Margetis, Hameed A. Naseem, and Shui-Qing Yu, Competition of optical transitions between direct and indirect bandgaps in Ge1-xSnx, Appl. Phys. Lett., vol. 105, pp. 051104 (2014), Highlighted for the latest research in thin film by AIP, http://aip-info.org/1XPS-2OZ9V-64C9M6MI78/cr.aspx
42 Wei Du, Yiyin Zhou, Seyed A. Ghetmiri, Aboozar Mosleh, Benjamin R. Conley, Amjad Nazzal, Richard A. Soref, Greg Sun, John Tolle, Joe Margetis, Hameed A. Naseem, and Shui-Qing Yu, Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge double heterostructure LEDs on Si substrates via CVD, Appl. Phys. Lett., vol. 104, pp. 241110 (2014)
41 Benjamin R. Conley, Aboozar Mosleh, Seyed Amir Ghetmiri, Wei Du, Richard A. Soref, Greg Sun, Joe Margetis, John Tolle, Hameed A. Naseem, and Shui-Qing Yu, Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection, Opt. Express Vol. 22, No. 13, pp. 15639-15652 (2014). This work was highlighted by the following media (see the link in below).
http://www.pddnet.com/news/2014/09/germanium-tin-cheaper-smartphones
http://phys.org/news/2014-09-germanium-tin-cheaper-infrared-cameras.html
http://www.azom.com/news.aspx?newsID=42434
http://www.sciencedaily.com/releases/2014/09/140918121338.htm
40 J. A. Steele, R. A. Lewis, M. Henini, O. M. Lemine, A. Alkaoud, D. Fan, Yu.I. Mazur, V. G. Dorogan, P. C. Grant, S.-Q. Yu, and G. J. Salamo, Raman reveals strong LO-phonon-hole-plasmon coupling in undoped GaAsBi, Optics Express , Vol. 22, No. 10, 11680-11689 (2014).
39 Yu. I. Mazur, M. D. Teodoro, L. Dias de Souza, M. E. Ware, D. Fan, S.-Q. Yu, G. G. Tarasov, G. E. Marques and G. J. Salamo, Low temperature magneto-photoluminescence of GaAsBi /GaAs quantum well heterostructures, Journal of Applied Physics 115, 123518 (2014).
41 P. C. Grant, D. Fan, A. Mosleh, V. G. Dorogan, M. E. Hawkridge, Y. I. Mazur, M. Benamara, S.-Q. Yu, G. J. Salamo, Rapid thermal annealing effect on GaAsBi/GaAs single quantum wells grown by molecular beam epitaxy, J. Vac. Sci. Technol. B, 32, 02C119 (2014)
38 Aboozar Mosleh, Seyed Amir Ghetmiri, Benjamin R. Conley, Michael Hawkridge, Mourad Benamara, John Tolle, Shui-Qing Yu, Hameed A. Naseem, Strain Engineering of High Quality CVD Grown Gesn Films for Optoelectronic Devices, Journal of Electronic Materials, DOI: 10.1007/s11664-014-3089-2 (2014)
37 Mohammad Ali Khorrami, Samir El-Ghazaly, Hameed Naseem, Shui-Qing Yu, Global Modeling of Active Terahertz Plasmonic Devices, IEEE Transactions on Terahertz Science and Technology, Vol. 4, No. 1, pp101-109, January (2014)
35 Yu. I. Mazur, V. G. Dorogan, L. D. de Souza, D. Fan, M. Benamara, M. Schmidbauer, M. E. Ware, G. G. Tarasov, S.-Q. Yu, G. E. Marques and G. J. Salamo, Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1-xBix /GaAs heterostructures, Nanotechnology 25 (2014) 035702 (9pp)
34 Asmaa Elkadi, Emmanuel Decrossas, Shui-Qing Yu, Hameed A. Naseem, and Samir M. El-Ghazaly, Aligned semiconducting single-walled carbon nanotubes: Semi-analytical solution, J. Appl. Phys. 114, 114306 (2013).
33 Zhaoquan Zeng, Timothy A. Morgan, Dongsheng Fan, Chen Li, Yusuke Hirono, Xian Hu, Yanfei Zhao, Joon Sue Lee, Jian Wang, Zhiming M. Wang, Shuiqing Yu, Michael E. Hawkridge, Mourad Benamara, and Gregory J. Salamo, Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction, AIP Advances 3, 072112 (2013)
This paper was highlighted in AIP and chosen as Editor’s picks. Further, it was reported by Science Daily and EurekAlert.
http://www.sciencedaily.com/releases/2013/10/131011135036.htm
http://www.eurekalert.org/pub_releases/2013-10/aiop-qcb101413.php
32 Greg Sun, Shui-Qing Yu, The SiGeSn Approach towards Si-based Lasers, Invited paper, Solid-State Electronics 83 (2013) 76–81
31 D. Fan, P. C. Grant, S.-Q. Yu, V. G. Dorogan, X. Hu, Z. Zeng, C. Li, M. E. Hawkridge, M. Benamara, Yu, I. Mazur, G. J. Salamo, S. R. Johnson, Zh. M. Wang, MBE Grown GaAsBi/GaAs Double Quantum Well Separate Confinement Heterostructures, J. Vac. Sci. Technol. B 31, 03C105 (2013)
30 N. Hossain, K. Hild, S. R. Jin, S.-Q. Yu, S. R. Johnson, D. Ding, and Y. H. Zhang, S. J. Sweeney, The influence of growth conditions on carrier recombination mechanisms in 1.3 µm GaAsSb/GaAs quantum well lasers, Appl. Phys. Lett. 102, 041106 (2013)
29 Yu. I. Mazur, V. G. Dorogan, M. Schmidbauer, G. G. Tarasov, S. R. Johnson, X. Lu, S.-Q. Yu, T. Tiedje, and G. J. Salamo, Strong excitation intensity dependence of the photoluminescence line shape in GaAs1-xBix single quantum well samples, J. Appl. Phys. 113, 144308 (2013)
28 Yu. I. Mazur, V. G. Dorogan, M. Benamara, M. E. Ware, M. Schmidbauer, G. G. Tarasov, S. R. Johnson, X. Lu, S.-Q. Yu, T. Tiedje, and G. J. Salamo, Effects of spatial confinement and layer disorder in photoluminescence of GaAs1-xBix /GaAs heterostructures, J. Phys. D: Appl. Phys. 46 (2013) 065306
26 D. Fan, , Z. Zeng, X. Hu, V. G. Dorogan, C. Li, M. Benamara, M. E. Hawkridge, Yu, I. Mazur, S.-Q. Yu, S. R. Johnson, Zh. M. Wang, and G. J. Salamo, Molecular Beam Epitaxy Growth of GaAsBi/GaAs/AlGaAs Separate Confinement Heterostructures, Appl. Phys. Lett., vol. 101, pp. 181103 (2012).
25 Mohammad Ali Khorrami, Samir El-Ghazaly, Shui-Qing Yu, and Hameed Naseem, Terahertz plasmon amplification using two-dimensional electron-gas layers, J. Appl. Phys. 111, 094501 (2012)
24 Dongsheng Fan, Zhaoquan Zeng, Vitaliy G. Dorogan, Yusuke Hirono, Chen Li, Yuriy I. Mazur, Shui-Qing Yu, Shane R. Johnson, Zhiming M. Wang, Gregory J. Salamo, Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy, J Mater Sci: Mater Electron, DOI 10.1007/s10854-012-0987-z (2012).
22 D. Ding, S. R. Johnson, S.-Q. Yu, S.-N. Wu, and Y.-H. Zhang, A Semi-Analytical Model for Semiconductor Solar Cells, J. Appl. Phys., 110, 123104 (2011).
21 K. Hild, I.P. Marko, S.J. Sweeney, S.R. Johnson, S.-Q. Yu and Y.-H. Zhang, Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3µm GaAsSb/GaAs Vertical Cavity Surface Emitting Lasers, Appl. Phys. Lett. 99, 071110 (2011).
20 Yu. I. Mazur, V. G. Dorogan, M. Schmidbauer, G. G. Tarasov, S. R. Johnson, X. Lu, S.-Q. Yu, Zh. M. Wang, T. Tiedje, and G. J. Salamo, Optical evidence of quantum well channel in low-temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructures, Nanotechnology 22, 375703 (2011).
19 S.-N. Wu, S.-Q. Yu, D. Ding, S. R. Johnson, and Y.-H. Zhang, Ultra High Luminescence Extraction via the Monolithic Integration of a Light Emitting Active Region with a Semiconductor Hemisphere, J. Vac. Sci. Technol. B 29, 031213 (2011).
17 Song-Nan Wu, Ding Ding, Shane R. Johnson, Shui-Qing Yu, and Yong-Hang Zhang, Four-Junction Solar Cells Using Lattice-Matched II-VI and III-V Semiconductors, Prog. Photovolt: Res. Appl. 18:1–7 (2010).
14 S.-Q. Yu, Y. Cao, S. R. Johnson, Y.-H. Zhang, Y.-Z. Huang, GaSb based mid-infrared equilateral-triangle-resonator semiconductor lasers, J. Vac. Sci. Technol. B 26, 56-61 (2008).
12 S.-Q. Yu, D. Ding, J.-B. Wang, N. Samal, S. R. Johnson, Y.-H. Zhang, High performance GaAsSb/GaAs quantum well lasers, J. Vac. Sci. Technol. B 25, 1658-1663 (2007). (Selected for the September 24, 2007 issue of Virtual Journal of Nanoscale Science & Technology)
11 S.-Q. Yu, J.-B. Wang, S. R. Johnson, D. Ding, D. Vasileska, Y.-H. Zhang, Impact of electronic density of states on electroluminescence refrigeration, Solid-State Electronics 51, 1387-1390 (2007).
10 J.-B. Wang, D. Ding, S. R. Johnson, S.-Q. Yu, and Y.-H. Zhang, Determination and improvement of spontaneous emission quantum efficiency in GaAs/AlGaAs heterostructures grown by mo-lecular beam epitaxy, Phys. stat. sol. (a) 244, No. 8, 1740-2751 (2007).
9 S. R. Johnson, D. Ding, J.-B. Wang, S.-Q. Yu, and Y.-H. Zhang, Excitation Dependent Photoluminescence Measurements of the Nonradiative Lifetime and Quantum Efficiency in GaAs, J. Vac. Sci. Technol. B 25, 1077-82 (2007).
8 D. Ding, S. R. Johnson, J.-B. Wang, S.-Q. Yu, Y.-H. Zhang, Intrinsic Irreversibility in Semiconductor Light Emission, Phys. stat. sol. (c) 4, No. 5, 1698–1701 (2007).
6. J.-B. Wang, S. R. Johnson, D. Ding, S.-Q. Yu, Y.-H. Zhang, “Influence of photon recycling on cooling efficiency and cooling power in semiconductor luminescence refrigeration”, J. Appl. Phys. 100, 043502 (2006).
5. S.-Q. Yu, X. Jin, S. R. Johnson, Y.-H. Zhang, “Gain Saturation and Carrier Distribution Effects in Molecular Beam Epitaxy Grown GaAsSb/GaAs Quantum Well Lasers”, J. Vac. Sci. Technol. B 24, 1617 (2006).
3. S. R. Johnson, C.-Z. Guo, S. A. Chaparro, Yu. G. Sadofyev, J.-B. Wang, Y. Cao, N. Samal, X. Jin, S.-Q. Yu, D. Ding, Y.-H. Zhang, GaAsSb/GaAs Band Alignment Evaluation for Long-Wave Photonic Applications, J. Crystal Growth 251, 521 (2003).
2. D.-S. Jiang, J.-B. Wang, X.-G. Liang, Z.-B. Chen, S.-Q. Yu, Y. Cao, Y.-H. Zhang, C. Navarro, S. Chaparro, S. R. Johnson, LUMINESCENCE PROPERTIES OF GaAsSb/GaAs QUANTUM WELL LASER STRUCTURES, JOURNAL OF INFRARED AND MILLIMETER WAVES, Vol.21 No.z1 P.7-10 (2002).
1. S. R. Johnson, S. Chaparro, J.-B. Wang, N. Samal, Y. Cao, Z.-B. Chen, C. Navarro, X. Jin, S.-Q. Yu, D. J. Smith, C.-Z. Guo, P. Dowd, W. Braun, Y.-H. Zhang, GaAs-Substrate Based Long-Wave Active Materials with Type-II Band Alignments, J. Vac. Sci. Technol. B 19, 1501 (2001).